800V N Channel Planar MOSFET Siliup SP2N80TH Featuring Low RDS on and Fast Switching for Power Conversion
Key Attributes
Model Number:
SP2N80TH
Product Custom Attributes
Drain To Source Voltage:
800V
Configuration:
-
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.6pF
Number:
1 N-channel
Output Capacitance(Coss):
40pF
Input Capacitance(Ciss):
380pF
Pd - Power Dissipation:
87W
Gate Charge(Qg):
9.6nC@10V
Mfr. Part #:
SP2N80TH
Package:
TO-252
Product Description
Product Overview
The SP2N80TH is an 800V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-frequency switching applications. It features fast switching speeds, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 2N80
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 800 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | 10V | 4.4 | |||
| Continuous Drain Current | ID | 2 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 800 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 30 | V | ||
| Continuous Drain Current | ID | (TC=25) | 2 | A | ||
| Continuous Drain Current | ID | (TC=100) | 1.3 | A | ||
| Pulsed Drain Current | IDM | 8 | A | |||
| Single Pulse Avalanche Energy | EAS | 45 | mJ | |||
| Power Dissipation | PD | (TC=25) | 87 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.43 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 800 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=640V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 3.0 | 4.0 | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=1A | - | 4.4 | 5.5 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 380 | - | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | - | 40 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | - | 1.6 | - | pF |
| Total Gate Charge | Qg | VDS=640V, VGS=10V, ID=2A | - | 9.6 | - | nC |
| Gate-Source Charge | Qgs | VDS=640V, VGS=10V, ID=2A | - | 2.3 | - | nC |
| Gate-Drain Charge | Qgd | VDS=640V, VGS=10V, ID=2A | - | 4.6 | - | nC |
| Turn-On Delay Time | td(on) | VDD=400V, VGS=10V, RG=25, ID=2A | - | 12.6 | - | nS |
| Rise Time | tr | VDD=400V, VGS=10V, RG=25, ID=2A | - | 23 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=400V, VGS=10V, RG=25, ID=2A | - | 26 | - | nS |
| Fall Time | tf | VDD=400V, VGS=10V, RG=25, ID=2A | - | 26.6 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 2 | A | |
| Reverse Recovery Time | trr | IS=2A, di/dt=100A/us, TJ=25 | - | 365 | - | nS |
| Reverse Recovery Charge | Qrr | IS=2A, di/dt=100A/us, TJ=25 | - | 1.2 | - | uC |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP2N80TH_C42372390.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
