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quality P Channel MOSFET Siliup SP2101CT3 20V Device with High Current Capability in Compact SOT 323 Package factory
quality P Channel MOSFET Siliup SP2101CT3 20V Device with High Current Capability in Compact SOT 323 Package factory

P Channel MOSFET Siliup SP2101CT3 20V Device with High Current Capability in Compact SOT 323 Package

Key Attributes
Model Number: SP2101CT3
Product Custom Attributes
Pd - Power Dissipation:
290mW
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.2A
RDS(on):
110mΩ@4.5V;140mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
49pF
Number:
1 P-Channel
Output Capacitance(Coss):
58pF
Input Capacitance(Ciss):
485pF
Gate Charge(Qg):
6.5nC@2.5V
Mfr. Part #:
SP2101CT3
Package:
SOT-323
Product Description

Product Overview

The SP2101CT3 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-323 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Package: SOT-323
  • Device Code: TS1

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
Static Drain-Source On-Resistance RDS(on) @-4.5V 110 140 m
Continuous Drain Current ID -1.2 A
Static Drain-Source On-Resistance RDS(on) @-2.5V 140 180 m
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -1.2 A
Pulse Drain Current IDM Tested -2.8 A
Power Dissipation PD 290 mW
Thermal Resistance Junction-to-Ambient RJA 431 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.5 -0.7 -1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-500mA 110 140 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-500mA 140 180 m
Input Capacitance Ciss VDS=-10V , VGS=0V , f=1MHz 485 pF
Output Capacitance Coss 58 pF
Reverse Transfer Capacitance Crss 49 pF
Total Gate Charge Qg VDS=-10V , VGS=-2.5V , ID=-1.2A 6.5 nC
Gate-Source Charge Qgs 0.28
Gate-Drain Charge Qg d 0.6
Turn-On Delay Time td(on) VDD=-10V VGS=-4.5V , RG=6 , ID=-1.2A 7 nS
Turn-On Rise Time tr 6
Turn-Off Delay Time td(off) 42
Turn-Off Fall Time tf 6.5
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (SOT-323)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 - 1.100 0.035 - 0.043
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.000 0.035 - 0.039
b 0.200 - 0.400 0.008 - 0.016
c 0.080 - 0.150 0.003 - 0.006
D 2.000 - 2.200 0.079 - 0.087
E 1.150 - 1.350 0.045 - 0.053
E1 2.150 - 2.450 0.085 - 0.096
e 0.650 TYP. 0.026 TYP.
e1 1.200 - 1.400 0.047 - 0.055
L 0.525 REF. 0.021 REF.
L1 0.260 - 0.460 0.010 - 0.018
0 - 8 0 - 8

2504101957_Siliup-SP2101CT3_C41355152.pdf

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