60V Dual P Channel MOSFET Siliup BSS84KDW with 130mA Continuous Drain Current SOT 363 Package
Key Attributes
Model Number:
BSS84KDW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130mA
RDS(on):
4.2Ω@10V;4.5Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
2 P-Channel
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
320mW
Input Capacitance(Ciss):
30pF
Gate Charge(Qg):
1.8nC@10V
Mfr. Part #:
BSS84KDW
Package:
SOT-363
Product Description
Product Overview
The BSS84KDW is a 60V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, ESD protection up to 2KV, and is available in a surface mount SOT-363 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: B84K
- Package: SOT-363
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @ -10V | 4.2 | 6 | ||
| Static Drain-Source On-Resistance | RDS(on) | @ -4.5V | 4.5 | 7 | ||
| Continuous Drain Current | ID | -130 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -130 | mA | |||
| Pulse Drain Current | IDM | Tested | -520 | mA | ||
| Power Dissipation | PD | 320 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 390 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.8 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-150mA | 4.2 | 6 | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-150mA | 4.5 | 7 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-5V , VGS=0V , f=1MHz | 30 | pF | ||
| Output Capacitance | Coss | 10 | pF | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-0.15A | 1.8 | nC | ||
| Gate-Source Charge | Qgs | 0.5 | ||||
| Gate-Drain Charge | Qg | d | 0.18 | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=50, ID=-0.15A | 8.6 | nS | ||
| Turn-On Rise Time | tr | 20 | ||||
| Turn-Off Delay Time | td(off) | 14 | ||||
| Turn-Off Fall Time | tf | 77 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information | ||||||
| Package Type | SOT-363 | |||||
| Dimensions (mm) | A | Min. | 0.90 | Max. | 1.00 | |
| Dimensions (mm) | A1 | Min. | 0.00 | Max. | 0.10 | |
| Dimensions (mm) | B | Min. | 0.10 | Max. | 0.30 | |
| Dimensions (mm) | b1 | Min. | 1.30 | |||
| Dimensions (mm) | D | Min. | 1.80 | Max. | 2.20 | |
| Dimensions (mm) | E | Min. | 2.00 | Max. | 2.20 | |
| Dimensions (mm) | E1 | Min. | 1.15 | Max. | 1.35 | |
| Dimensions (mm) | e | TYP. | 0.65 | |||
| Dimensions (mm) | L | Min. | 0.10 | Max. | 0.25 | |
| Dimensions (mm) | L1 | Min. | 0.15 | Max. | 0.4 | |
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| BSS84KDW | SOT-363 | 3000 | ||||
2504101957_Siliup-BSS84KDW_C41354832.pdf
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