Power MOSFET SP020N09GHTD 200V N Channel Fast Switching Low Gate Charge Suitable for Power Switching
Key Attributes
Model Number:
SP020N09GHTD
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
110A
RDS(on):
9.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
437pF
Input Capacitance(Ciss):
4.183nF
Pd - Power Dissipation:
270W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SP020N09GHTD
Package:
TO-263-3L
Product Description
Product Overview
The SP020N09GHTD is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, DC-DC converters, and power management systems. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP020N09GHTD
- Channel Type: N-Channel
- Package Type: TO-263
- Marking: 020N09GH
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (V(BR)DSS) | V(BR)DSS | 200 | V | |||
| On-Resistance (RDS(on)) | RDS(on) | 10V | 9.2 | m | ||
| Continuous Drain Current (ID) | ID | 110 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 200 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 110 | A | |||
| Continuous Drain Current (Tc=100) | ID | 73 | A | |||
| Pulsed Drain Current | IDM | 440 | A | |||
| Single Pulse Avalanche Energy | EAS | 1296 | mJ | |||
| Power Dissipation (Tc=25) | PD | 270 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 200 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 160V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | uA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 9.2 | 11.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 4183 | - | pF |
| Output Capacitance | Coss | - | 437 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 12 | - | pF | |
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=20A | - | 48 | - | nC |
| Gate-Source Charge | Qgs | - | 31 | - | nC | |
| Gate-Drain Charge | Qgd | - | 11 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 13 | - | nS |
| Rise Time | tr | - | 25 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 31 | - | nS | |
| Fall Time | tf | - | 25 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 110 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 165 | - | nS |
| Reverse Recovery Charge | Qrr | - | 521 | - | nC | |
| Package Information (TO-263) | ||||||
| Dimension A | 4.470 | 4.670 | mm | |||
| Dimension A1 | 0.000 | 0.150 | mm | |||
| Dimension B | 1.120 | 1.420 | mm | |||
| Dimension b | 0.710 | 0.910 | mm | |||
| Dimension b1 | 1.170 | 1.370 | mm | |||
| Dimension c | 0.310 | 0.530 | mm | |||
| Dimension c1 | 1.170 | 1.370 | mm | |||
| Dimension D | 10.010 | 10.310 | mm | |||
| Dimension E | 8.500 | 8.900 | mm | |||
| Dimension e | 2.540 TYP. | mm | ||||
| Dimension e1 | 4.980 | 5.180 | mm | |||
| Dimension L | 14.940 | 15.500 | mm | |||
| Dimension L1 | 4.950 | 5.450 | mm | |||
| Dimension L2 | 2.340 | 2.740 | mm | |||
| Dimension L3 | 1.300 | 1.700 | mm | |||
| Dimension | 0 | 8 | ||||
| Dimension V | 5.600 REF. | mm | ||||
2504101957_Siliup-SP020N09GHTD_C22466814.pdf
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