N Channel 40V MOSFET Featuring Split Gate Trench Technology Siliup SP40N05GNJ for DC DC Converters

Key Attributes
Model Number: SP40N05GNJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5mΩ@10V;8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
178pF
Number:
1 N-channel
Output Capacitance(Coss):
187pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.048nF
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
SP40N05GNJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP40N05GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching speed, low Gate Charge, and low RDS(on), enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters, motor control, and portable equipment.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co., Ltd.
  • Product Code: SP40N05GNJ
  • Device Code: 40N05G
  • Channel Type: N-Channel
  • Technology: Split Gate Trench

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 40 V
RDS(on) RDS(on) @10V 5 m
RDS(on) RDS(on) @4.5V 8 m
ID ID 40 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25, unless otherwise noted) 40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Tc=25C) 40 A
Continuous Drain Current ID (Tc=100C) 27 A
Pulse Drain Current IDM Tested 160 A
Single pulsed avalanche energy EAS 56 mJ
Power Dissipation PD (Tc=25C) 35 W
Thermal Resistance Junction-to-Case RJC 3.57 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V, VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A - 5 6.3 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=10A - 8 10.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 1048 - pF
Output Capacitance Coss - 187 - pF
Reverse Transfer Capacitance Crss - 178 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=30A - 28 - nC
Gate-Source Charge Qgs - 4 - nC
Gate-Drain Charge Qgd - 6 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=20 VGS=10V , RG=3, ID=30A - 6 - nS
Rise Time tr - 2.5 - nS
Turn-Off Delay Time td(off) - 22 - nS
Fall Time tf - 3.5 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 40 A
Reverse recovery time trr IS=20A, di/dt=100A/us, TJ=25 - 12 - nS
Reverse recovery charge Qrr - 14 - nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0 - 0.05 0 - 0.002
D 2.900 - 3.100 0.114 - 0.122
D1 2.300 - 2.600 0.091 - 0.102
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0 - 0.100 0 - 0.004
L3 0 - 0.100 0 - 0.004
H 0.315 - 0.515 0.012 - 0.020
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