Siliup SP40N04GNK 40V N Channel MOSFET Featuring Split Gate Trench Technology and Low RDS on for DC DC Converters
Product Overview
The SP40N04GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low Gate Charge, and low RDS(on), utilizing advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters, motor control, and portable equipment.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N04GNK
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | @10V | 4.5 | m | |||
| RDS(on)TYP | @4.5V | 6.2 | m | |||
| ID | 65 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 65 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 44 | A | |||
| Pulse Drain Current Tested | IDM | 260 | A | |||
| Single pulsed avalanche energy | EAS | 110 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 65 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.92 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 4.5 | 5.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =10A | - | 6.2 | 8.0 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 885 | - | pF |
| Output Capacitance | Coss | - | 478 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 12.1 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 35 | - | nC |
| Gate-Source Charge | Qgs | - | 6.4 | - | ||
| Gate-Drain Charge | Qgd | - | 3.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20 VGS=10V , RG=3, ID=30A | - | 8 | - | nS |
| Rise Time | Tr | - | 5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 24 | - | ||
| Fall Time | Tf | - | 3.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 65 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 14 | - | nS |
| Reverse recovery charge | Qrr | - | 16 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
2506271720_Siliup-SP40N04GNK_C49257248.pdf
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