Siliup SP40N04GNK 40V N Channel MOSFET Featuring Split Gate Trench Technology and Low RDS on for DC DC Converters

Key Attributes
Model Number: SP40N04GNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V;6.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
12.1pF
Number:
1 N-channel
Output Capacitance(Coss):
478pF
Pd - Power Dissipation:
65W
Input Capacitance(Ciss):
885pF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SP40N04GNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP40N04GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low Gate Charge, and low RDS(on), utilizing advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters, motor control, and portable equipment.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N04GNK
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 40 V
RDS(on)TYP @10V 4.5 m
RDS(on)TYP @4.5V 6.2 m
ID 65 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25, unless otherwise noted) 40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 65 A
Continuous Drain Current (Tc=100C) ID 44 A
Pulse Drain Current Tested IDM 260 A
Single pulsed avalanche energy EAS 110 mJ
Power Dissipation (Tc=25C) PD 65 W
Thermal Resistance Junction-to-Case RJC 1.92 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =20A - 4.5 5.3 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =10A - 6.2 8.0 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 885 - pF
Output Capacitance Coss - 478 - pF
Reverse Transfer Capacitance Crss - 12.1 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=30A - 35 - nC
Gate-Source Charge Qgs - 6.4 -
Gate-Drain Charge Qgd - 3.5 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20 VGS=10V , RG=3, ID=30A - 8 - nS
Rise Time Tr - 5 -
Turn-Off Delay Time Td(off) - 24 -
Fall Time Tf - 3.5 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 65 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 14 - nS
Reverse recovery charge Qrr - 16 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2506271720_Siliup-SP40N04GNK_C49257248.pdf

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