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quality Low Saturation Voltage PNP Transistor Slkor 2SB1197KR with Collector Emitter Breakdown Voltage of 32V factory
quality Low Saturation Voltage PNP Transistor Slkor 2SB1197KR with Collector Emitter Breakdown Voltage of 32V factory

Low Saturation Voltage PNP Transistor Slkor 2SB1197KR with Collector Emitter Breakdown Voltage of 32V

Key Attributes
Model Number: 2SB1197KR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
DC Current Gain:
390@100mA,3V
Transition Frequency(fT):
150MHz
Type:
PNP
Vce Saturation(VCE(sat)):
400mV@500mA,50mA
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
32V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2SB1197KR
Package:
SOT-23
Product Description

Product Overview

The 2SB1197K is a PNP plastic-encapsulate transistor designed for general-purpose applications. It offers a very low VCE(sat) of typically less than 0.4V at IC/IB = 500mA / 50mA, complementing the 2SD1781. This transistor is suitable for use in common emitter configurations and exhibits a transition frequency (fT) of 150 MHz at VCE=5V, IC=50mA, f=100MHz.

Product Attributes

  • Type: PNP Plastic-Encapsulate Transistors
  • Brand: slkormicro
  • Model: 2SB1197K

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V
Collector cut-off current ICBO VCB=20V, IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A
DC current gain hFE(1) VCE=3V, IC=100mA 120 390
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.4 V
Transition frequency fT VCE=5V, IC=50mA, f=100MHz 150 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 10 pF
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 800 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance Junction To Ambient RJA 625 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150
Rank Range Marking
Q 120-270 AFQ
R 180-390 AFR
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 1.800 - 2.000 0.071 - 0.079
e1
L
L1 0.300 - 0.500 0.012 - 0.020
0 - 8 0 - 8
0.550 REF 0.022 REF

2204201445_Slkor-2SB1197KR_C2999979.pdf

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