Low Forward Voltage Drop Rectifier Taiwan Semiconductor HS1J-K R3G Suitable for Automated Placement
Key Attributes
Model Number:
HS1J-K R3G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
1 Independent
Voltage - Forward(Vf@If):
1.7V@1A
Reverse Leakage Current (Ir):
5uA
Current - Rectified:
1A
Mfr. Part #:
HS1J-K R3G
Package:
SMA
Product Description
Product Overview
The HS1D-K to HS1M-K series are high-efficiency surface-mount rectifiers from Taiwan Semiconductor. Featuring a glass-passivated junction chip, these rectifiers are ideal for automated placement due to their low forward voltage drop and fast switching speeds, contributing to high efficiency. They are compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC, and are halogen-free. Applications include switching mode power supplies (SMPS), adapters, lighting, and converters.
Product Attributes
- Brand: Taiwan Semiconductor
- Package: DO-214AC (SMA)
- Material: Glass passivated junction chip
- Certifications: RoHS Directive 2011/65/EU, WEEE 2002/96/EC, IEC 61249-2-21 (Halogen-free)
- Flammability Rating: UL 94V-0
- Moisture Sensitivity Level: Level 1 (per J-STD-0020)
- Terminal Finish: Matte tin plated leads
- Whisker Test: Meet JESD 201 class 1A
- Color: Green compound available (suffix "G")
Technical Specifications
| Parameter | Symbol | HS1D-K | HS1G-K | HS1J-K | HS1K-K | HS1M-K | Unit |
| KEY PARAMETERS | |||||||
| Average Forward Current | IF(AV) | 1 | 1 | 1 | 1 | 1 | A |
| Repetitive Peak Reverse Voltage | VRRM | 200 | 400 | 600 | 800 | 1000 | V |
| Surge Peak Forward Current | IFSM | 30 | 30 | 30 | 30 | 30 | A |
| Max Junction Temperature | TJ MAX | 150 | 150 | 150 | 150 | 150 | C |
| Package | DO-214AC (SMA) | DO-214AC (SMA) | DO-214AC (SMA) | DO-214AC (SMA) | DO-214AC (SMA) | ||
| ABSOLUTE MAXIMUM RATINGS | |||||||
| Repetitive peak reverse voltage | VRRM | 200 | 400 | 600 | 800 | 1000 | V |
| Reverse voltage, total rms value | VR(RMS) | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 200 | 400 | 600 | 800 | 1000 | V |
| Forward current | IF(AV) | 1 | 1 | 1 | 1 | 1 | A |
| Surge peak forward current, 8.3 ms single half sine-wave | IFSM | 30 | 30 | 30 | 30 | 30 | A |
| Junction temperature | TJ | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | C |
| Storage temperature | TSTG | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | -55 to +150 | C |
| THERMAL PERFORMANCE | |||||||
| Junction-to-ambient thermal resistance | RJA | 70 | 70 | 70 | 70 | 70 | C/W |
| ELECTRICAL SPECIFICATIONS | |||||||
| Forward voltage per diode (IF =1A, TJ=25C) | VF | 1.0 | 1.3 | 1.7 | 1.7 | 1.7 | V |
| Reverse current @ rated VR (TJ = 25C) | IR | 5 | 5 | 5 | 5 | 5 | A |
| Reverse current @ rated VR (TJ =100C) | IR | 100 | 100 | 100 | 100 | 100 | A |
| Reverse current @ rated VR (TJ =125C) | IR | 150 | 150 | 150 | 150 | 150 | A |
| Junction capacitance (1 MHz, VR=4.0V) | CJ | 20 | 15 | 15 | 15 | 15 | pF |
| Reverse recovery time (IF=0.5A , IR=1.0A IRR=0.25A) | trr | 50 | 75 | 75 | 75 | 75 | ns |
2002261104_Taiwan-Semiconductor-HS1J-K-R3G_C486173.pdf
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