High cell density trench technology P Channel MOSFET Slkor IRF9540 with excellent thermal performance
Key Attributes
Model Number:
IRF9540
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
73pF@20V
Number:
1 P-Channel
Pd - Power Dissipation:
58W
Input Capacitance(Ciss):
3.02nF@20V
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
IRF9540
Package:
TO-220
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key features include high cell density trench technology for ultra-low RDS(ON), excellent package for good heat dissipation, and availability as a green device.
Product Attributes
- Brand: slkormicro
- Model: IRF9540
- Technology: Advanced Trench Technology
- Certifications: Green device available
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current-TC=25 | -20 | A | |||
| ID | Continuous Drain Current-TC=100 | -14 | A | |||
| IDM | Pulsed Drain Current1 | -85 | A | |||
| PD | Total Power Dissipation | 58 | W | |||
| EAS | Single Pulsed Avalanche Energy | 177 | mJ | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +150 | |||
| Thermal Characteristics (TC=25 unless otherwise noted) | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.15 | /W | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Sourtce Breakdown Voltage | VGS=0V,ID=-250A | -100 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VGS=0V, VDS=-100V | -50 | μA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0A | ±100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | GATE-Source Threshold Voltage | VGS=VDS, ID=-250μA | -1.2 | -1.7 | -2.5 | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V,ID=-10A | 78 | 90 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V,ID=-8A | 86 | 110 | mΩ | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=-20V, VGS=0V, f=1MHz | 3020 | pF | ||
| Coss | Output Capacitance | 120 | pF | |||
| Crss | Reverse Transfer Capacitance | 73 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time2,3 | VDD=-50V, ID=-10A, VGS=-10V, RG=3.3Ω | 11 | ns | ||
| tr | Rise Time2,3 | 27 | ns | |||
| td(off) | Turn-Off Delay Time2,3 | 78 | ns | |||
| tf | Fall Time2,3 | 53 | ns | |||
| Qg | Total Gate Charge2,3 | VGS=-10V, VDS=-50V, ID=-20A | 44 | nC | ||
| Qgs | Gate-Source Charge2,3 | 9 | nC | |||
| Qgd | Gate-Drain “Miller” Charge2,3 | 5.5 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain Diode Forward Voltage2 | VGS=0V,IS=-1A | -1.2 | V | ||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -20 | A | ||
| Trr | Reverse Recovery Time | IF=-8A , di/dt=-100A/µs , TJ=25℃ | 38.7 | nS | ||
| Qrr | Reverse Recovery Charge | 22.4 | nC | |||
2308091126_Slkor-IRF9540_C7496537.pdf
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