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quality Compact SOT-23 NPN Transistor Slkor SS30101-Q Ideal for General Purpose Electronic Circuits factory
quality Compact SOT-23 NPN Transistor Slkor SS30101-Q Ideal for General Purpose Electronic Circuits factory

Compact SOT-23 NPN Transistor Slkor SS30101-Q Ideal for General Purpose Electronic Circuits

Key Attributes
Model Number: SS30101-Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@100mA,1V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
500mV
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
SS30101-Q
Package:
SOT-23
Product Description

Product Overview

The SS30101 is an NPN transistor designed for general-purpose applications. It offers a DC current gain (hFE) ranging from 40 to 350, with specific values depending on the operating conditions and classification rank. This transistor is complementary to the SS30101, indicating a potential pairing for complementary symmetry circuits. It is housed in a SOT-23 package, making it suitable for compact electronic designs.

Product Attributes

  • Product Type: Transistor (NPN)
  • Brand: SLKOR MICRO
  • Model: SS30101
  • Complementary to: SS30101
  • Package: SOT-23
  • Marking: 556

Technical Specifications

Parameter Symbol Value Unit Conditions
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 0.5 A
Collector Power Dissipation PC 300 mW
Thermal Resistance from Junction to Ambient RJA /W
Storage Temperature Tstg -55+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO 30 V IC= 100A, IE=0
Collector-emitter breakdown voltage V(BR)CEO 30 V IC= 0.1mA, IB=0
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100A, IC=0
Collector cut-off current ICBO 0.1 A VCB=40V, IE=0
Emitter cut-off current IEBO 0.1 A VEB= 5V, IC=0
DC current gain hFE 40-50 VCE=1V, IC= 100mA (Rank P)
50-120 VCE=1V, IC= 100mA (Rank Q)
DC current gain hFE 120-200 VCE=1V, IC= 800mA (Rank P)
DC current gain hFE 200-350 VCE=1V, IC= 800mA (Rank Q)
Collector-emitter saturation voltage VCE(sat) 0.5 V IC=800mA, IB= 80mA
Base-emitter saturation voltage VBE(sat) 1.2 V IC=800mA, IB= 80mA
Transition frequency fT 100 MHz VCE=10V, IC= 50mA, f=30MHz

SOT-23 Package Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
0 8 0 8

2209051730_Slkor-SS30101-Q_C5155407.pdf

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