N Channel Enhancement Mode MOSFET Slkor SL9968 with Low RDS ON and 100V Drain Source Voltage Rating
Key Attributes
Model Number:
SL9968
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
24pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
960pF
Pd - Power Dissipation:
3.5W
Mfr. Part #:
SL9968
Package:
SOT-89
Product Description
SL9968 N-Channel Enhancement Mode MOSFET
The SL9968 is a high-performance N-Channel Enhancement Mode MOSFET designed for power management applications. It offers a robust and reliable solution with key features including a 100V drain-source voltage and low on-state resistance (RDS(ON) = 100m max. @ VGS=10V). This device is available in lead-free and green (RoHS compliant) versions, making it suitable for environmentally conscious designs. Its primary applications include DC/DC converters and load switching.
Product Attributes
- Brand: SLKormicro
- Certifications: Lead Free, Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 100 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Maximum Junction Temperature (TJ) | 150 | C | |||
| Storage Temperature Range (TSTG) | -55 | 150 | C | ||
| Diode Continuous Forward Current (IS) | T=25C | 3 | A | ||
| Continuous Drain Current (ID) | T=25C | A | |||
| Continuous Drain Current (ID) | T=70C | A | |||
| Pulsed Drain Current (IDM) | T=25C | 3.5 | A | ||
| Maximum Power Dissipation (PD) | TA=25C | W | |||
| Maximum Power Dissipation (PD) | TA=70C | 2.2 | W | ||
| Thermal Resistance-Junction to Ambient (RJA) | Steady State | 35 | C/W | ||
| Thermal Resistance-Junction to Ambient (RJA) | Steady State | 70 | C/W | ||
| Avalanche Current, Single pulse (IAS) | L=0.5mH | 7 | A | ||
| Avalanche Energy, Single pulse (EAS) | L=0.5mH | 12 | mJ | ||
| Static Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 100 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=80V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | TJ=85C | 30 | A | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1 | 2 | 3 | V |
| Gate Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V, IDS=4A | 80 | 100 | m | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V, IDS=3.5A | 85 | 110 | m | |
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD) | ISD=3A, VGS=0V | 0.8 | 1.3 | V | |
| Reverse Recovery Time (trr) | ISD=3A, dlSD/dt=100A/s | 27 | ns | ||
| Reverse Recovery Charge (Qrr) | ISD=3A, dlSD/dt=100A/s | 36 | nC | ||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,f=1MHz | 2.5 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=30V, Frequency=1.0MHz | 740 | 960 | pF | |
| Output Capacitance (Coss) | VGS=0V, VDS=30V, Frequency=1.0MHz | 45 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=30V, Frequency=1.0MHz | 24 | pF | ||
| Turn-on Delay Time (td(ON)) | VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=6 | 11 | 20 | ns | |
| Turn-on Rise Time (tr) | VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=6 | 6 | 11 | ns | |
| Turn-off Delay Time (td(OFF)) | VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=6 | 27 | 49 | ns | |
| Turn-off Fall Time (tf) | VDD=30V, RL=30, IDS=1A, VGEN=10V, RG=6 | 5 | 10 | ns | |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS=30V, VGS=4.5V, IDS=4A | 7.7 | nC | ||
| Total Gate Charge (Qg) | 16 | 23 | nC | ||
| Gate-Source Charge (Qgs) | VDS=30V, VGS=10V, IDS=4A | 2.5 | nC | ||
| Gate-Drain Charge (Qgd) | VDS=30V, VGS=10V, IDS=4A | 3 | nC | ||
2410121806_Slkor-SL9968_C5122530.pdf
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