Power Switching N channel MOSFET SLkor SL7N65F with 30 nC Gate Charge and 7A Continuous Drain Current
Key Attributes
Model Number:
SL7N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
950pF@25V
Pd - Power Dissipation:
27.9W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SL7N65F
Package:
TO-220F-3
Product Description
Product Overview
The SL7N65 is a high-performance N-channel MOSFET designed for various power switching applications. It features low gate charge, fast switching speeds, and excellent dv/dt capability, making it suitable for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. This RoHS compliant product is 100% avalanche tested, ensuring reliability and robustness.
Product Attributes
- Brand: SLKORMicro
- Certifications: RoHS
- Halogen Free: No
Technical Specifications
| Order Code | Marking | Package | Device Weight | VDSS (V) | ID (A) | RDS(ON) () | QG (nC) |
|---|---|---|---|---|---|---|---|
| SL7N65F | SL7N65F | TO-220FT | 2.2g(typ) | 650 | 7* | 1.4 (VGS=10V) | 30 |
| SL7N65C | SL7N65C | TO-220C | 2.15g(typ) | 650 | 7* | 1.4 (VGS=10V) | 30 |
Absolute Ratings
| Parameter | Symbol | TO-220FT | TO-220C | Unit |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 650 | 650 | V |
| Continuous Drain Current (TC=25) | ID | 7* | 7* | A |
| Continuous Drain Current (TC=100) | ID | 4.4* | 4.4* | A |
| Drain Current pulsed (note 1) | IDM | 28* | 28* | A |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy (note 2) | EAS | 429 | mJ | |
| Repetitive Avalanche Current (note 1) | EAR | 41 | mJ | |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5 | V/ns | |
| Total Power Dissipation (TC=25) | PD | 27.9 | 147 | W |
| Derate above 25 | 0.22 | 1.18 | W/ | |
| Operating Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55+150 | ||
| Maximum Temperature for Soldering Leads | TL | 300 | ||
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=250A, referenced to 25 | - | 0.51 | - | V/ |
| Drain-Source leakage Current | IDSS | VDS=650V,VGS=0V | - | - | 1 | A |
| Drain-Source leakage Current | IDSS | VDS=520V,TC=125 | - | - | 50 | A |
| Gate-Source leakage current (Forward) | IGSS | VDS=0V,VGS=30V | - | - | 100 | nA |
| Gate-Source leakage current (Reverse) | IGSS | VDS=0V,VGS=-30V | - | - | -100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=250A | 2.5 | - | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=3.5A | - | 1.1 | 1.4 | |
| Forward Transconductance | gFS | VDS=30V,ID=3.5A (note 4) | - | 5.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | CISS | VDS=25V,VGS=0V, f=1MHBZB | - | 950 | - | pF |
| Output capacitance | COSS | - | 108 | - | pF | |
| Reverse transfer capacitance | CRSS | - | 16 | - | pF | |
| Switching Characteristics | ||||||
| Turn on delay time | td(ON) | VDD=325V,ID=7A, RG=25 note 45 | - | 16 | - | ns |
| Rise time | tr | - | 36 | - | ns | |
| Turn off delay time | td(off) | - | 83 | - | ns | |
| Fall time | tf | - | 40 | - | ns | |
| Total Gate Charge | QG | VDS=520V,ID=7A, VGS=10V note 45 | - | 30 | - | nC |
| Gate-Source charge | QGS | - | 5 | - | nC | |
| Gate-Drain charge | QGD | - | 15 | - | nC | |
| Source-Drain Diode Characteristics | ||||||
| Continuous Forward Current | IS | - | - | 7 | A | |
| Pulsed Forward Current | ISM | - | - | 28 | A | |
| Forward Voltage | VSD | VGS=0V,IS=7A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V,IS=7A, dIF/dt=100A/s (note 4) | - | 436 | - | ns |
| Reverse recovery charge | Qrr | - | 8.7 | - | C | |
Thermal Characteristics
| Parameter | Symbol | TO-220FT | TO-220C | Unit |
|---|---|---|---|---|
| Thermal Resistance,Junction to Case | Rth(j-c) | 4.47 | 0.85 | /W |
| Thermal Resistance,Junction to Ambient | Rth(j-a) | 49.5 | 60 | /W |
Notes
1:Pulse width limited by maximum junction temperature
2:L=17.5mH, IAS=7A, VDD=50V, RG=25 ,Starting TJ=25
3:ISD 7A,di/dt 100A/s,VDDBVDSS, Starting TJ=25
4:Pulse Test:Pulse Width 300s,Duty Cycle2
5:Essentially independent of operating temperature
2412052036_Slkor-SL7N65F_C251157.pdf
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