P Channel MOSFET Slkor SL3423 featuring trench technology and low gate charge for switching circuits
Key Attributes
Model Number:
SL3423
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
700mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 P-Channel
Input Capacitance(Ciss):
289pF
Output Capacitance(Coss):
98pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
SL3423
Package:
SOT-23
Product Description
Product Overview
This P-Channel MOSFET, SL3423, is designed for fast switching applications. It features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology. It is also available as a green device.
Product Attributes
- Brand: SLKOR Micro
- Model: SL3423
- Package: SOT-23
- Technology: Trench
- Features: Green Device Available
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±10 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V | -4.2 | -4 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V | -4 | -3.7 | A | ||
| IDM | Pulsed Drain Current | -18 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.32 | 1 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 1 | 125 | /W | ||
| RJA | Thermal Resistance Junction-Ambient | 1 (t ≤10s) | 95 | /W | ||
| RJC | Thermal Resistance Junction-Case | 1 | 80 | /W | ||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250μA | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -20V, VGS = 0V | -1 | μA | ||
| IGSS | Gate to Body Leakage Current | VDS =0V, VGS = ±10V | ±10 | μA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= -250μA | -0.4 | -0.7 | -1.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS =-4.5V, ID =-4A | 30 | 40 | mΩ | |
| RDS(on) | Static Drain-Source on-Resistance | VGS =-2.5V, ID =-3A | 40 | 56 | mΩ | |
| Ciss | Input Capacitance | VDS = -10V, VGS = 0V, f = 1.0MHz | 289 | pF | ||
| Coss | Output Capacitance | 98 | pF | |||
| Crss | Reverse Transfer Capacitance | 22 | pF | |||
| Qg | Total Gate Charge | VDS = -10V, ID = -4.1A, VGS = -4.5V | 9 | nC | ||
| Qgs | Gate-Source Charge | 1 | nC | |||
| Qgd | Gate-Drain(Miller) Charge | 2.6 | nC | |||
| td(on) | Turn-on Delay Time | VDD = -10V, RG = 1Ω, VGEN=-4.5V,RL=1.2Ω | 12 | ns | ||
| tr | Turn-on Rise Time | 35 | ns | |||
| td(off) | Turn-off Delay Time | 30 | ns | |||
| tf | Turn-off Fall Time | 10 | ns | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | -4.1 | A | |||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -16.4 | A | |||
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS = -4.1A | -1.2 | V | ||
2309281726_Slkor-SL3423_C18208583.pdf
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