Power switching MOSFET Slkor SL1002B with low gate charge and enhanced efficiency in compact design
Key Attributes
Model Number:
SL1002B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
23pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
711pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
13.6nC@10V
Mfr. Part #:
SL1002B
Package:
SOT-23
Product Description
Product Overview
The FKN0008 is a high cell density trenched N-channel MOSFET designed for excellent RDSON and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Green Device Available
- Meets RoHS and Green Product requirements
Technical Specifications
| Model | BVDSS (V) | RDSON (m) | ID (A) | VGS(th) (V) | Qg (nC) | Ciss (pF) | Coss (pF) | Crss (pF) | RJA (/W) | RJC (/W) |
| SL1002B | 100 | 260-310 (VGS=10V) / 270-320 (VGS=4.5V) | 2 (ID@TA=25) / 1.2 (ID@TA=70) | 1.0-2.5 | 9.7-13.6 | 508-711 | 29-41 | 16.4-23 | 125 | 80 |
2208041800_Slkor-SL1002B_C5122614.pdf
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