N Channel MOSFET Slkor SL5N50D featuring low gate charge and 98 watt power dissipation for industrial
Key Attributes
Model Number:
SL5N50D
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Input Capacitance(Ciss):
608pF
Pd - Power Dissipation:
98W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SL5N50D
Package:
TO-252
Product Description
Product Overview
The SL5N50D is an N-Channel MOSFET designed for high-performance applications. It features low RDS(ON) of 1.5 (Max) at VGS=10V, low gate charge (Typical 18.5nC), improved dv/dt capability, and is 100% avalanche tested. This MOSFET is suitable for various power switching applications requiring efficient and reliable performance.
Product Attributes
- Brand: SLKORMicro
- Model: SL5N50D
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| MAXIMUM RATING | ||||||
| Drain-Source voltage | VDSS | VGS=0V | - | - | 500 | V |
| Gate-Source voltage | VGSS | - | - | ±30 | ±30 | V |
| Drain current (continuous) | ID | TC = 25°C | - | - | 5.0 | A |
| Drain peak current (continuous) | ID | TC = 100°C | - | - | 3.4 | A |
| Drain Current (pulsed) | IDM | - | - | - | 21.2 | A |
| Total Power Dissipation | PD | TC = 25°C | - | - | 98.4 | W |
| Derating Factor above 25°C | - | - | - | 0.78 | - | W/°C |
| Single Pulsed Avalanche Energy | EAS | - | - | - | 390 | mJ |
| Repetitive Avalanche Energy | EAR | - | - | - | 9.84 | mJ |
| Peak Diode Recovery dv/dt | dv/dt | - | - | - | 4.5 | V/ns |
| Storage Temperature and Operating Junction Temperature | TSTG, Tj | - | -55 | - | +150 | °C |
| Maximum Lead Temperature for soldering purpose, 1/8" from Case for 5 seconds | TL | - | - | - | 300 | °C |
| ELECTRICAL CHARACTERISTICS@ Ta=25°C unless otherwise specified | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ ΔTJ | ID=250uA | - | 0.47 | - | V/°C |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V, VGS=0V | - | - | 1 | µA |
| Gate-body Leakage (Forward) | IGSS | VDS=0V, VGS=30V | - | - | 100 | nA |
| Gate-body Leakage (Reverse) | IGSS | VDS=0V, VGS=-30V | - | -100 | - | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 2.0 | - | 3.5 | V |
| Static drain-Source on-resistance | RDS(ON) | VGS=10V, ID=2.65A | - | 1.3 | 1.5 | Ω |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 608 | - | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | - | 75 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | - | 25 | - | pF |
| Turn-On Delay Time | td(on) | VDD=250V, ID=5.0A, RG=25Ω | - | 60 | 42 | ns |
| Turn-On Rise Time | tR | VDD=250V, ID=5.0A, RG=25Ω | - | 49 | 108 | ns |
| Turn-Off Delay Time | td(off) | VDD=250V, ID=5.0A, RG=25Ω | - | 60 | 130 | ns |
| Turn-Off Fall Time | tf | VDD=250V, ID=5.0A, RG=25Ω | - | 49 | 108 | ns |
| Total Gate Charge | Qg | VDS=400V, ID=5.3A, VGS=10V | - | 18.5 | 23 | nC |
| Gate-Source Charge | Qgs | VDS=400V, ID=5.3A, VGS=10V | - | 4 | - | nC |
| Gate-Drain Charge | Qgd | VDS=400V, ID=5.3A, VGS=10V | - | 8 | - | nC |
| DRAIN-SOURCE DIODE CHARACTERISTICS | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | - | 5.3 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 21.2 | A |
| Diode Forward Voltage | VSD | VGS=0V, IS=5.3A | - | - | 1.5 | V |
| Reverse Recovery Time | trr | VGS=0V, IS=5.3A, dIF/dt=100A/us | - | 302 | - | ns |
| Reverse Recovery Charge | Qrr | VGS=0V, IS=5.3A, dIF/dt=100A/us | - | 1.8 | - | µC |
2204201445_Slkor-SL5N50D_C2999972.pdf
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