N Channel 650V MOSFET Slkor SL8N65CD featuring low on resistance and high avalanche energy tolerance
Key Attributes
Model Number:
SL8N65CD
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
383pF
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
10.1nC@10V
Mfr. Part #:
SL8N65CD
Package:
TO-252
Product Description
Product Overview
This 650V N-Channel Super-JMOSFET is manufactured using Slkor's advanced Superjunction MOSFET technology. This technology is optimized for reduced on-state resistance, superior switching performance, and enhanced ruggedness against high energy pulses in avalanche and commutation modes. It is well-suited for high-efficiency switched-mode power supplies.
Product Attributes
- Brand: Slkor
- Technology: Super-JMOSFET
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Drain Current - Continuous (TC = 25) | ID | 8* | A | |||
| Drain Current - Continuous (TC = 100) | ID | 4.8* | A | |||
| Drain Current - Pulsed (Note 1) | IDM | 24* | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy (Note 2) | EAS | 156 | mJ | |||
| Avalanche Current (Note 1) | IAR | 1.9 | A | |||
| Repetitive Avalanche Energy (Note 1) | EAR | 0.61 | mJ | |||
| Peak Diode Recovery dv/dt (Note 3) | dv/dt | 20 | V/ns | |||
| MOSFET dv/dt | 100 | |||||
| Power Dissipation (TC = 25) | PD | 24 | 69 | W | ||
| Derate above 25 | 0.19 | 0.56 | W/ | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 260 | ||||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 5.2 | 1.8 | /W | ||
| Thermal Resistance, Case-to-Sink | RJS | Typ. | - | - | /W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | 62.5 | /W | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250uA | 650 | V | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250uA, TJ = 150 | 650 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 600 V, VGS = 0 V | 1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =480 V, TC = 125 | 2.1 | uA | ||
| Gate-Body Leakage Current, Forward | IGSSF | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse | IGSSR | VGS = -30 V, VDS = 0 V | -100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 2.5 | 4.5 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS = 10 V, ID = 2.5 A | 550 | 600 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 400 V, VGS = 0 V, f = 1MHz | 383 | pF | ||
| Output Capacitance | Coss | 20 | pF | |||
| Reverse Transfer Capacitance | Crss | pF | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDS = 400 V, ID =2.5 A, RG = 10 ,VGS = 10 V (Note 4, 5) | 6 | ns | ||
| Turn-On Rise Time | tr | 7 | ns | |||
| Turn-Off Delay Time | td(off) | 26 | ns | |||
| Turn-Off Fall Time | tf | 13 | ns | |||
| Total Gate Charge | Qg | VDS = 400 V, ID =2.5A, VGS = 10 V (Note 4, 5) | 10.1 | nC | ||
| Gate-Source Charge | Qgs | 2.1 | nC | |||
| Gate-Drain Charge | Qgd | 4.9 | nC | |||
| Gate Resistance | RG | f = 1MHz | 0.7 | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 8 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 24 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0 V, IS = 2.5A | 1.2 | V | ||
| Reverse Recovery Time | trr | VDD = 400 V, IS = 2.5A, dIF / dt = 100 A/us (Note 4) | 173 | ns | ||
| Reverse Recovery Charge | Qrr | 1.1 | uC | |||
2309281727_Slkor-SL8N65CD_C18208653.pdf
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