N Channel MOSFET 20V 10A Slkor SL0C10A Featuring Low Gate Charge and Trench Power LV Technology

Key Attributes
Model Number: SL0C10A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
10A
RDS(on):
9.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
600mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
201pF
Input Capacitance(Ciss):
1.544nF
Pd - Power Dissipation:
1.5W
Output Capacitance(Coss):
210pF
Gate Charge(Qg):
23.5nC@4.5V
Mfr. Part #:
SL0C10A
Package:
PDFN-8L(3x3)
Product Description

Product Overview

This 20V/10A N-Channel MOSFET, utilizing Trench Power LV MOSFET technology, offers high power and current handling capabilities with low gate charge. It is ideal for PWM applications, power management, and load switching scenarios.

Product Attributes

  • Brand: SLKOR
  • Model: SL0C10A
  • Package: PDFN3X3-8L

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Drain-Source Breakdown VoltageBV(BR)DSSVGS=0VID=250A----20V
Zero Gate Voltage Drain CurrentIDSSVDS=20VVGS=0V----1A
Gate-Body Leakage CurrentIGSSVGS=12VVDS=0V----100nA
Gate Threshold VoltageVGS(th)VDS=VGSID=250A0.40.61.1V
Drain-Source On-State ResistanceRDS(on)VGS=4.5VID=10A--9.423m
Drain-Source On-State ResistanceRDS(on)VGS=2.5VID=5A--13.225m
Input CapacitanceCISSVDS=10VID=10AVGS=4.5Vf=1MHz--1544--pF
Output CapacitanceCOSSVDS=10VID=10AVGS=4.5Vf=1MHz--210--pF
Reverse Transfer CapacitanceCRSSVDS=10VID=10AVGS=4.5Vf=1MHz--201--pF
Total Gate ChargeQgVDD=10VID=10AVGS=4.5VRG=3--23.5--nC
Gate Source ChargeQgsVDD=10VID=10AVGS=4.5VRG=3--2.8--nC
Gate Drain ChargeQgdVDD=10VID=10AVGS=4.5VRG=3--5.75--nC
Turn-on Delay Timetd(on)VDD=10VID=10AVGS=4.5VRG=3--3--nS
Turn-on Rise TimetrVDD=10VID=10AVGS=4.5VRG=3--10--nS
Turn-Off Delay Timetd(off)VDD=10VID=10AVGS=4.5VRG=3--35--nS
Turn-Off Fall TimetfVDD=10VID=10AVGS=4.5VRG=3--12--nS
Diode Continuous Forward CurrentISTc=25C----10A
Pulse Drain CurrentIDMTc=25C----35A
Tested Continuous Drain CurrentIDTc=25C----10A
Maximum Junction TemperatureTJ------150C
Storage Temperature RangeTSTG---55--150C
Thermal Resistance Junction-to-AmbientRJAMounted on Large Heat Sink--65--C/W
Maximum Power DissipationPD----1.5--W
Diode Forward on voltageVSDTj=25Is=10A----1.2V

2412171034_Slkor-SL0C10A_C42415159.pdf

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