N Channel Enhancement Mode MOSFET Slkor BSS138 with 50V Drain Source Voltage and 220mA Continuous Current
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V,220mA
Gate Threshold Voltage (Vgs(th)):
1.6V
Number:
1 N-channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
225mW
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The BSS138 is an N-Channel Enhancement-Mode MOS FET designed for various electronic applications. It offers a maximum drain-source voltage of 50V and a continuous drain current of 220mA, with a pulsed drain current of up to 880mA. This device is suitable for applications requiring efficient switching and amplification.
Product Attributes
- Brand: slkormicro.com
- Model: BSS138
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Drain-Source Breakdown Voltage | BVDSS | 50 | - | - | V | (ID =250uA,VGS=0V) |
| Gate Threshold Voltage | VGS(th) | 0.8 | - | 1.6 | V | (ID =1mA,VGS= VDS) |
| Diode Forward Voltage Drop | VSD | - | - | 1.4 | V | (ISD=220mA,VGS=0V) |
| Zero Gate Voltage Drain Current | IDSS | - | - | 0.5 | uA | (VGS=0V, VDS= BVDSS) |
| Zero Gate Voltage Drain Current | IDSS | - | - | 100 | nA | (VGS=0V, VDS=0.6BVDSS) |
| Gate Body Leakage | IGSS | - | - | +100 | nA | (VGS=+20V, VDS=0V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | - | 3.5 | (ID=220mA,VGS=10V) | |
| Static Drain-Source On-State Resistance | RDS(ON) | - | - | 6 | (ID=220mA,VGS=4.5V) | |
| Input Capacitance | CISS | - | - | 50 | pF | (VGS=0V, VDS=25V,f=1MHz) |
| Common Source Output Capacitance | COSS | - | - | 25 | pF | (VGS=0V, VDS=25V,f=1MHz) |
| Turn-ON Time | t(on) | - | - | 20 | ns | (VDS=30V, ID=200mA, RGEN=25) |
| Turn-OFF Time | t(off) | - | - | 20 | ns | (VDS=30V, ID=200mA, RGEN=25) |
| Total Device Dissipation | PD | - | 225 | - | mW | TA=25 |
| Total Device Dissipation Derate | - | - | 1.8 | - | mW/ | Derate above25 |
| Thermal Resistance Junction to Ambient | RJA | - | 350 | - | /W | - |
| Junction and Storage Temperature | TJ,Tstg | -55 | - | +150 | - |
2409302230_Slkor-BSS138_C426569.pdf
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