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quality N Channel MOSFET Suzhou Good Ark Elec SSFL0954 100V Low On Resistance Fast Switching SOT 223 Package factory
quality N Channel MOSFET Suzhou Good Ark Elec SSFL0954 100V Low On Resistance Fast Switching SOT 223 Package factory

N Channel MOSFET Suzhou Good Ark Elec SSFL0954 100V Low On Resistance Fast Switching SOT 223 Package

Key Attributes
Model Number: SSFL0954
Product Custom Attributes
Current - Continuous Drain(Id):
1.7A
Operating Temperature -:
-50℃~+150℃
RDS(on):
310mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
50pF
Input Capacitance(Ciss):
800pF
Pd - Power Dissipation:
1.76W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
SSFL0954
Package:
SOT-223
Product Description

Product Overview

The SSFL0954 is a 100V N-Channel MOSFET utilizing advanced MOSFET process technology to achieve high cell density and low on-resistance. This device is engineered for high efficiency and reliability, making it ideal for switched-mode power supplies and a wide range of other applications. Key features include fast switching, reverse body recovery, low on-resistance, and low gate charge.

Product Attributes

  • Brand: GoodArk Semiconductor (implied by URL)
  • Model: SSFL0954
  • Channel Type: N-Channel
  • Package Type: SOT-223

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Voltage VDS - - - 100 V
Gate-Source Voltage VGS - - - 20 V
Drain Current-Continuous (TC=25C) ID - - 1.7 - A
Drain Current-Continuous (TC=100C) ID - - 1.08 - A
Power Dissipation (TC=25C) PD - - - 1.76 W
Power Dissipation-Derate above 25C - - - 0.014 - W/C
Thermal Resistance, Junction-to-Ambient RJA - - - 70 C/W
Thermal Resistance, Junction-to-Case RJC - - - 30 C/W
Operating Junction Temperature Range TJ - -50 - 150 C
Storage Temperature Range TSTG - -50 - 150 C
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 100 - - V
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=1A - 260 310 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=0.5A - 270 320 m
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.2 1.8 2.5 V
Gate Threshold Voltage Temperature Coefficient VGS(th)/TJ - - -5 - mV/C
Forward Transconductance gfs VDS=10V, ID=2A - 2.3 - S
Total Gate Charge Qg VDS=50V, ID=1A, VGS=10V - 9 18 nC
Gate-Source Charge Qgs VDS=50V, ID=1A, VGS=10V - 2.3 4.6 nC
Gate-Drain Charge Qgd VDS=50V, ID=1A, VGS=10V - 1.1 2.5 nC
Turn-On Delay Time td(on) VDD=50V, RG=3.3, VGS=10V, ID=1A - 5.2 10 nS
Rise Time tr VDD=50V, RG=3.3, VGS=10V, ID=1A - 6.8 12 nS
Turn-Off Delay Time td(off) VDD=50V, RG=3.3, VGS=10V, ID=1A - 14.5 28 nS
Fall Time tf VDD=50V, RG=3.3, VGS=10V, ID=1A - 2.1 5 nS
Input Capacitance Ciss VDS=25V, VGS=0V, F=1MHz - 492 800 pF
Output Capacitance Coss VDS=25V, VGS=0V, F=1MHz - 27 50 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, F=1MHz - 15 25 pF
Gate Resistance Rg VGS=0V, VDS=0V, F=1MHz - 2.8 5.6
Continuous Source Current IS - - - 4 A
Pulsed Source Current ISM - - - 8 A
Diode Forward Voltage VSD VGS=0V, IS=1A, TJ=25C - - 1 V

2411201843_Suzhou-Good-Ark-Elec-SSFL0954_C19841893.pdf

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