Phase Control Thyristor VISHAY VS-ST300C12C1 Metal Case Ceramic Insulator for Industrial Applications
Key Attributes
Model Number:
VS-ST300C12C1
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
200mA
Voltage - On State(Vtm):
2.18V
Current - On State(It(RMS)):
1.29kA
Peak Off - State Voltage(Vdrm):
1.2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
VS-ST300C12C1
Package:
TO-200AB
Product Description
Product Overview
The Vishay Semiconductors VS-ST300C Series comprises high-performance Phase Control Thyristors in a Hockey PUK version. Featuring a center amplifying gate and a metal case with a ceramic insulator, these thyristors are designed and qualified for industrial-level applications. They are ideal for DC motor controls, controlled DC power supplies, and AC controllers, offering robust performance and reliability.
Product Attributes
- Brand: Vishay Semiconductors
- Series: VS-ST300C Series
- Package: E-PUK (TO-200AB)
- Material: Metal case with ceramic insulator
- Compliance: For definitions of compliance, see www.vishay.com/doc?99912
Technical Specifications
| Parameter | Test Conditions | Values | Units | ||
|---|---|---|---|---|---|
| Primary Characteristics | |||||
| Average On-State Current (IT(AV)) | 650 | A | |||
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 400, 800, 1200, 1600, 1800, 2000 | V | |||
| On-State Voltage (VTM) | 2.18 | V | |||
| Gate Trigger Current (IGT) | 100 | mA | |||
| Operating Junction Temperature (TJ) | -40 to +125 | C | |||
| Package | E-PUK (TO-200AB) | ||||
| Circuit Configuration | Single SCR | ||||
| Major Ratings and Characteristics | |||||
| Average On-State Current (IT(AV)) | Ths = 55 C | 650 | A | ||
| RMS On-State Current (IT(RMS)) | Ths = 25 C | 1290 | A | ||
| Peak Surge Current (ITSM) | 50 Hz | 8000 | A | ||
| Peak Surge Current (ITSM) | 60 Hz | 8380 | A | ||
| I2t | 50 Hz | 320 | kAs | ||
| I2t | 60 Hz | 292 | kAs | ||
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 400 to 2000 | V | |||
| Typical Turn-off Time (tq) | 100 | s | |||
| Operating Junction Temperature (TJ) | -40 to 125 | C | |||
| Voltage Ratings | |||||
| Type Number | Voltage Code | VDRM/VRRM, Maximum Repetitive Peak and Off-State Voltage | VRSM, Maximum Non-Repetitive Peak Voltage | IDRM/IRRM Maximum at TJ = TJ Maximum | mA |
| VS-ST300C..C | 04 | 400 | 500 | 50 | |
| VS-ST300C..C | 08 | 800 | 900 | 50 | |
| VS-ST300C..C | 12 | 1200 | 1300 | 50 | |
| VS-ST300C..C | 16 | 1600 | 1700 | 50 | |
| VS-ST300C..C | 18 | 1800 | 1900 | 50 | |
| VS-ST300C..C | 20 | 2000 | 2100 | 50 | |
| Absolute Maximum Ratings | |||||
| Maximum average on-state current | 180 conduction, half sine wave, double side (single side) cooled | 650 (320) | A | ||
| Heatsink Temperature | 55 (75) | C | |||
| Maximum RMS on-state current | DC at 25 C heatsink temperature, double side cooled | 1290 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 10 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 8000 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 8.3 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 8380 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 10 ms, 100 % VRRM reapplied | 6730 | A | ||
| Maximum peak, one-cycle non-repetitive surge current (ITSM) | t = 8.3 ms, 100 % VRRM reapplied | 7040 | A | ||
| Maximum I2t for fusing | t = 10 ms, No voltage reapplied | 320 | kAs | ||
| Maximum I2t for fusing | t = 8.3 ms, No voltage reapplied | 292 | kAs | ||
| Maximum I2t for fusing | t = 10 ms, 100 % VRRM reapplied | 226 | kAs | ||
| Maximum I2t for fusing | t = 8.3 ms, 100 % VRRM reapplied | 207 | kAs | ||
| Maximum It for fusing (I2t) | t = 0.1 to 10 ms, no voltage reapplied | 3200 | kAs | ||
| Low level value of threshold voltage (VT(TO)1) | (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum | 0.97 | V | ||
| High level value of threshold voltage (VT(TO)2) | (I > x IT(AV)), TJ = TJ maximum | 0.98 | V | ||
| Low level value of on-state slope resistance (rt1) | (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum | 0.74 | m | ||
| High level value of on-state slope resistance (rt2) | (I > x IT(AV)), TJ = TJ maximum | 0.73 | m | ||
| Maximum on-state voltage (VTM) | Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse | 2.18 | V | ||
| Maximum holding current (IH) | TJ = 25 C, anode supply 12 V resistive load | 600 | mA | ||
| Typical latching current (IL) | 1000 | ||||
| Switching Parameter | |||||
| Maximum non-repetitive rate of rise of turned-on current (dI/dt) | Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM | 1000 | A/s | ||
| Typical delay time (td) | Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C | 1.0 | s | ||
| Typical turn-off time (tq) | ITM = 300 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V, 100 , tp = 500 s | 100 | |||
| Blocking Parameter | |||||
| Maximum critical rate of rise of off-state voltage (dV/dt) | TJ = TJ maximum, linear to 80 % rated VDRM | 500 | V/s | ||
| Maximum peak reverse and off-state leakage current (IRRM, IDRM) | TJ = TJ maximum, rated VDRM/VRRM applied | 50 | mA | ||
| Triggering Parameter | |||||
| Maximum peak gate power (PGM) | TJ = TJ maximum, tp 5 ms | 10.0 | W | ||
| Maximum average gate power (PG(AV)) | TJ = TJ maximum, f = 50 Hz, d% = 50 | 2.0 | |||
| Maximum peak positive gate current (IGM) | TJ = TJ maximum, tp 5 ms | 3.0 | A | ||
| Maximum peak positive gate voltage (+VGM) | TJ = TJ maximum, tp 5 ms | 20 | V | ||
| Maximum peak negative gate voltage (-VGM) | 5.0 | ||||
| DC gate current required to trigger (IGT) | TJ = -40 C, 12 V anode to cathode applied | 200 (TYP.) | mA | ||
| DC gate current required to trigger (IGT) | TJ = 25 C, 12 V anode to cathode applied | 100 - 200 (TYP. - MAX.) | mA | ||
| DC gate current required to trigger (IGT) | TJ = 125 C, 12 V anode to cathode applied | 50 (TYP.) | mA | ||
| DC gate voltage required to trigger (VGT) | TJ = -40 C | 2.5 (TYP.) | V | ||
| DC gate voltage required to trigger (VGT) | TJ = 25 C | 1.8 - 3.0 (TYP. - MAX.) | V | ||
| DC gate voltage required to trigger (VGT) | TJ = 125 C | 1.1 (TYP.) | V | ||
| DC gate current not to trigger (IGD) | TJ = TJ maximum | 10.0 | mA | ||
| DC gate voltage not to trigger (VGD) | 0.25 | V | |||
| Thermal and Mechanical Specifications | |||||
| Maximum operating junction temperature range (TJ) | -40 to 125 | C | |||
| Maximum storage temperature range (TStg) | -40 to 150 | C | |||
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation single side cooled | 0.09 | K/W | ||
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation double side cooled | 0.04 | K/W | ||
| Maximum thermal resistance, case to heatsink (RthC-hs) | DC operation single side cooled | 0.02 | |||
| Maximum thermal resistance, case to heatsink (RthC-hs) | DC operation double side cooled | 0.01 | |||
| Mounting force, 10 % | 9800 (1000) | N (kg) | |||
| Approximate weight | 83 | g | |||
| Case style | See dimensions | E-PUK (TO-200AB) | |||
Ordering Information
Device code format: VS-ST300C [Voltage Code] C [Terminal Type] [dV/dt Selection]
- VS: Vishay Semiconductors product
- ST300C: Essential part number
- Voltage Code: e.g., 04 (400V), 08 (800V), 12 (1200V), 16 (1600V), 18 (1800V), 20 (2000V)
- C: PUK case
- Terminal Type: 0 (eyelet), 1 (fast-on), 2 (eyelet soldered), 3 (fast-on soldered)
- dV/dt Selection: None (500 V/s standard), L (1000 V/s special selection)
Dimensions
See www.vishay.com/doc?95075 for E-PUK (TO-200AB) dimensions.
2411272147_VISHAY-VS-ST300C12C1_C17679305.pdf
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