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quality Surface mount NPN transistor WeEn BUJ302AD118 featuring planar passivation and SOT428 DPAK package design factory
quality Surface mount NPN transistor WeEn BUJ302AD118 featuring planar passivation and SOT428 DPAK package design factory

Surface mount NPN transistor WeEn BUJ302AD118 featuring planar passivation and SOT428 DPAK package design

Key Attributes
Model Number: BUJ302AD,118
Product Custom Attributes
Emitter-Base Voltage(Vebo):
24V
Current - Collector Cutoff:
-
DC Current Gain:
66@100mA,5V
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
600mV
Type:
NPN
Pd - Power Dissipation:
80W
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
BUJ302AD,118
Package:
TO-252-2
Product Description

Product Overview

The BUJ302AD is a high voltage, high speed NPN power switching transistor designed for surface mounting. It features planar passivation, a SOT428 (DPAK) package, and offers very high voltage capability with low thermal resistance. Its fast switching speed and low conduction losses make it suitable for demanding applications.

Product Attributes

  • Brand: WeEn Semiconductors
  • Package Type: SOT428 (DPAK)

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
ICMpeak collector currentFig. 1; Fig. 2; Fig. 3--8A
Ptottotal power dissipationTmb ≤ 25 °C; Fig. 4--80W
VCESMcollector-emitter peak voltageVBE = 0 V--1050V
hFEDC current gainIC = 0.1 A; VCE = 5 V; Tmb = 25 °C; Fig. 114866100-
hFEDC current gainIC = 0.8 A; VCE = 3 V; Tmb = 25 °C; Fig. 12254250-
VCESMcollector-emitter peak voltageVBE = 0 V--1050V
VCEOcollector-emitter voltageIB = 0 A--400V
VEBOemitter-base voltageIC = 0 A; IE = 2 A; tp < 10 ms-24-V
ICcollector current---4A
ICMpeak collector currentFig. 1; Fig. 2; Fig. 3--8A
IBbase current---2A
IBMpeak base current---4A
Ptottotal power dissipationTmb ≤ 25 °C; Fig. 4--80W
Tstgstorage temperature--65-150°C
Tjjunction temperature---150°C
Rth(j-mb)thermal resistance from junction to mounting baseFig. 5--1.56K/W
Rth(j-a)thermal resistance from junction to ambientfree air printed circuit board (FR4) mounted; minimum footprint-75-K/W
ICEScollector-emitter cut-off currentVBE = 0 V; VCE = 1050 V-0.210µA
ICEOcollector-emitter cut-off currentVCE = 400 V; IB = 0 A; Tmb = 25 °C-10250mA
V(BR)EBOemitter-base breakdown voltageIB = 1 mA; IC = 0 A; Tmb = 25 °C1519-V
VCEOsuscollector-emitter sustaining voltageIB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 °C; Fig. 6; Fig. 7400470-V
VCEsatcollector-emitter saturation voltageIC = 1 A; IB = 0.2 A; Tmb = 25 °C; Fig. 8; Fig. 9-0.150.5V
VCEsatcollector-emitter saturation voltageIC = 3.5 A; IB = 1 A; Tmb = 25 °C; Fig. 8; Fig. 9-0.61.5V
VBEsatbase-emitter saturation voltageIC = 3.5 A; IB = 1 A; Tmb = 25 °C; Fig. 10-1.11.5V
hFEDC current gainIC = 0.1 A; VCE = 5 V; Tmb = 25 °C; Fig. 114866100-
hFEDC current gainIC = 0.8 A; VCE = 3 V; Tmb = 25 °C; Fig. 12254250-
tsstorage timeIC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 60 Ω; VBB = -5 V; Tmb = 25 °C; resistive load; tp = 300 µs; Fig. 13; Fig. 14--3.5µs
tffall timeIC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 60 Ω; VBB = -5 V; Tmb = 25 °C; resistive load; tp = 300 µs; Fig. 13; Fig. 14--500ns

2411220148_WeEn-BUJ302AD-118_C256398.pdf

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