Power Management Transistor WILLSEMI WPT2F30-6TR with High DC Current Gain and Compact SOT23 6L Package
Key Attributes
Model Number:
WPT2F30-6/TR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@1A,2V
Transition Frequency(fT):
-
Number:
1 PNP
Vce Saturation(VCE(sat)):
390mV@0.8A,10mA
Type:
PNP
Pd - Power Dissipation:
800mW
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
WPT2F30-6/TR
Package:
SOT-23-6L
Product Description
Product Overview
The WPT2F30 is a single PNP bipolar power transistor from Will Semiconductor Ltd. It features a very low saturation voltage and is designed for applications such as charging circuits and other power management functions in portable equipment. This device offers high DC current gain and a continuous collector current of 3A, housed in a compact SOT-23-6L package.
Product Attributes
- Brand: Will Semiconductor Ltd.
- Product Code: WPT2F30
- Material: Pb-free
- Package: SOT-23-6L
- Certifications: Standard Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter breakdown voltage | BVCEO | IC=-10mA, IB=0mA | -30 | V | ||
| Collector-base breakdown voltage | BVCBO | IC=-1mA, IE=0mA | -30 | V | ||
| Emitter-base breakdown voltage | BVEBO | IE=-100uA, IC=0mA | -6 | V | ||
| Collector cutoff current | ICBO | VCB=-30V | -100 | nA | ||
| Emitter cutoff current | IEBO | VEB=-5V | -100 | nA | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-2A, IB=-200mA | -0.28 | -0.35 | V | |
| IC=-0.5A, IB=-5mA | -0.20 | -0.30 | V | |||
| IC=-0.8A, IB=-10mA | -0.28 | -0.39 | V | |||
| IC=-2A, IB=-200mA | -1.0 | -1.5 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=-2A, IB=-200mA | -1.0 | -1.5 | V | |
| IC=-0.5A, VCE=-2V | -0.7 | -1.0 | V | |||
| Base-emitter forward voltage | VBE(on) | IC=-0.5A, VCE=-2V | -0.7 | -1.0 | V | |
| DC current gain | hFE | VCE=-2V,IC=-1A | 100 | 200 | 300 |
| Parameter | Symbol | Conditions | Value | Unit |
| Junction-to-Ambient Thermal Resistance | RJA | a | 104 | C/W |
| Junction-to-Ambient Thermal Resistance | RJA | b | 155 | C/W |
| Collector-emitter voltage | VCEO | -30 | V | |
| Collector-base voltage | VCBO | -30 | V | |
| Emitter-base voltage | VEBO | -6 | V | |
| Continues collector current | IC | a | -3 | A |
| Continues collector current | IC | b | -2 | A |
| Pulse collector current | ICM | c | -6 | A |
| Power dissipation | PD | a | 1.2 | W |
| Power dissipation | PD | b | 0.8 | W |
| Maximum junction temperature | TJ | 150 | C | |
| Lead Temperature | TL | 260 | C | |
| Storage Temperature Range | Tstg | -55 to 150 | C |
2410121447_WILLSEMI-WPT2F30-6-TR_C239544.pdf
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