Power Switching Transistor TOSHIBA 2SA1298-Y LF Silicon PNP Epitaxial Type with High DC Current Gain
Key Attributes
Model Number:
2SA1298-Y,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
100@100mA,1V
Transition Frequency(fT):
120MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
400mV@500mA,20mA
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SA1298-Y,LF
Package:
SOT-23
Product Description
Product Overview
The TOSHIBA 2SA1298 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for low frequency power amplifier and power switching applications. Key advantages include high DC current gain (hFE = 100 to 320), low saturation voltage (VCE (sat) = -0.4 V max), and suitability as a driver stage for small motors. It is complementary to the 2SC3265 and comes in a small package.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon PNP Epitaxial Transistor
- Package: JEDEC TO-236MOD / JEITA SC-59
- Weight: 0.012 g (typ.)
- Start of Commercial Production: 1982-10
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -30 V, IE = 0 | - | - | -0.1 | µA |
| Emitter cut-off current | IEBO | VEB = -50 V, IC = 0 | - | - | -0.1 | µA |
| Collector-emitter breakdown voltage | V(BR)CEO | IC = -10 mA, IB = 0 | -25 | - | - | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE = -0.1 mA, IC = 0 | -5 | - | - | V |
| DC current gain | hFE (1) | VCE = -1 V, IC = -100 mA | 100 | - | 320 | - |
| hFE (2) | VCE = -1 V, IC = -800 mA | 40 | - | - | - | |
| Collector-emitter saturation voltage | VCE (sat) | IC = -500 mA, IB = -20 mA | - | - | -0.4 | V |
| Base-emitter voltage | VBE | VCE = -1 V, IC = -10 mA | -0.5 | - | -0.8 | V |
| Transition frequency | fT | VCE = -5 V, IC = -10 mA | - | 120 | - | MHz |
| Collector output capacitance | Cob | VCB = -10 V, IE = 0, f = 1 MHz | - | 13 | - | pF |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -30 | V |
| Collector-emitter voltage | VCEO | -25 | V |
| Emitter-base voltage | VEBO | -5 | V |
| Collector current | IC | -800 | mA |
| Base current | IB | -160 | mA |
| Collector power dissipation | PC | 200 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature range | Tstg | -55 to 150 | °C |
2410121757_TOSHIBA-2SA1298-Y-LF_C146432.pdf
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