Silicon Carbide Half Bridge Module Wolfspeed CAB011A12GM3T 1200 Volt for High Frequency Applications
Key Attributes
Model Number:
CAB011A12GM3T
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
149A
Operating Temperature -:
-40℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.9V@34mA
Mfr. Part #:
CAB011A12GM3T
Product Description
Product Overview
The Wolfspeed CAB011A12GM3 and CAB011A12GM3T are 1200 V, 11 m Silicon Carbide Half-Bridge Modules designed for high-frequency operation with ultra-low loss characteristics. These normally-off, fail-safe devices feature zero turn-off tail current from the MOSFET and are built on an Aluminum Nitride Ceramic Substrate, with an option for pre-applied thermal interface material. They enable compact, lightweight systems with increased efficiency due to the low switching and conduction losses of SiC, leading to reduced thermal requirements and system cost. Ideal applications include DC-DC converters, EV chargers, high-efficiency converters/inverters, renewable energy systems, and smart-grid/grid-tied distributed generation.
Product Attributes
- Brand: Wolfspeed
- Registered Trademarks: Wolfspeed, Wolfstreak logo
- Trademark: Wolfspeed logo
- Material: Silicon Carbide (SiC), Aluminum Nitride Ceramic Substrate
- Certifications: RoHS Compliant, REACh Compliance
- Availability: With or without Pre-Applied Thermal Interface Material
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 1200 | V | ||||
| System Drain-Source Voltage | VDS | 1200 | V | ||||
| System RDS(on) | RDS(on) | 11 | m | ||||
| Gate-Source Voltage, Maximum Value | VGS max | -8 | +19 | V | Transient, < 100 ns | Fig. 33 | |
| Gate-Source Voltage, Recommended | VGS op | -4 | +15 | V | Static DC | ||
| DC Continuous Drain Current (TVJ 150 C) | ID | 141 | A | VGS = 15 V, THS = 75 C, TVJ 150 C | Fig. 20 | ||
| DC Continuous Drain Current (TVJ 175 C) | ID | 149 | A | VGS = 15 V, THS = 75 C, TVJ 175 C | |||
| DC Source-Drain Current (Body Diode) | ISD BD | 97 | A | VGS = -4 V, THS = 75 C, TVJ 175 C | |||
| Pulsed Drain Current | ID (pulsed) | 300 | A | VGS = 15 V, THS = 75 C | tPmax limited by TVJmax | ||
| Virtual Junction Temperature | TVJ op | -40 | 175 | C | Operation | Intermittent with Reduced Life | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.9 | V | VDS = VGS, ID = 34 mA | 2.1 VDS = VGS, ID = 34 mA, TVJ = 150 C |
| Zero Gate Voltage Drain Current | IDSS | 3 | 57 | A | VGS = 0 V, VDS = 1200 V | ||
| Gate-Source Leakage Current | IGSS | 0.03 | 0.75 | A | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance (Devices Only) | RDS(on) | 10.7 | 13.9 | m | VGS = 15 V, ID = 150A | Fig. 2, Fig. 3 | |
| Drain-Source On-State Resistance (Devices Only) | RDS(on) | 17.1 | m | VGS = 15 V, ID = 150 A, TVJ = 150 C | |||
| Drain-Source On-State Resistance (Devices Only) | RDS(on) | 19.2 | m | VGS = 15 V, ID = 150 A, TVJ = 175 C | |||
| Transconductance | gfs | 104 | S | VDS = 20 V, ID = 150 A | Fig. 4 | ||
| Transconductance | gfs | 96 | S | VDS = 20 V, ID = 150 A, TVJ = 150 C | |||
| Turn-On Switching Energy | EOn | 2.8 | 3.5 | mJ | VDD = 600 V, ID = 150 A, VGS = -4 V/15 V, RG(EXT) = 1.5 , L = 22.7 H | TVJ = 25 C, TVJ = 125 C, TVJ = 150 C, Fig. 11, Fig. 13 | |
| Turn-Off Switching Energy | EOff | 0.7 | 0.7 | mJ | VDD = 600 V, ID = 150 A, VGS = -4 V/15 V, RG(EXT) = 1.5 , L = 22.7 H | TVJ = 25 C, TVJ = 125 C, TVJ = 150 C | |
| Internal Gate Resistance | RG(int) | 1.57 | f = 100 kHz, VAC = 25 mV | ||||
| Input Capacitance | Ciss | 11 | nF | VGS = 0 V, VDS = 1000 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Output Capacitance | Coss | 0.4 | nF | ||||
| Reverse Transfer Capacitance | Crss | 24 | pF | ||||
| Gate to Source Charge | QGS | 120 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 40 A, Per IEC60747-8-4 pg 21 | |||
| Gate to Drain Charge | QGD | 102 | nC | ||||
| Total Gate Charge | QG | 354 | nC | ||||
| FET Thermal Resistance, Junction to Heatsink | Rth JHS | 0.213 | C/W | Measured with Pre-Applied TIM | Fig. 17 | ||
| Body Diode Forward Voltage | VSD | 5.3 | V | VGS = -4 V, ISD = 150 A | Fig. 7 | ||
| Body Diode Forward Voltage | VSD | 4.8 | V | VGS = -4 V, ISD = 150 A, TVJ = 150 C | |||
| Reverse Recovery Time | tRR | 29 | ns | VGS = -4 V, ISD = 150 A, VR = 600 V, di/dt = 13.5 A/ns, TVJ = 150 C | Fig. 32 | ||
| Reverse Recovery Charge | QRR | 3.5 | C | ||||
| Peak Reverse Recovery Current | IRRM | 189 | A | ||||
| Reverse Recovery Energy | ERR | 0.11 | 0.51 | 0.67 | mJ | VDD = 600 V, ID = 150 A, VGS = -4 V/15 V, RG(EXT) = 1.5 , L = 22.7 H | TVJ = 25 C, TVJ = 125 C, TVJ = 150 C, Fig. 14 |
| Package Resistance, M1 (High-Side) | RHS | 0.28 | m | THS = 125C, ID = 75 A | Note 1 | ||
| Package Resistance, M2 (Low-Side) | RLS | 0.29 | m | THS = 125C, ID = 75 A | Note 1 | ||
| Stray Inductance | LStray | 18.3 | nH | Between DC- and DC+, f = 10 MHz | |||
| Case Temperature | TC | -40 | 125 | C | |||
| Mounting Torque | MS | 2.0 | 2.3 | N-m | M4 bolts | ||
| Weight | W | 39 | g | ||||
| Case Isolation Voltage | Visol | 3 | kV | AC, 50 Hz, 1 minute | |||
| Comparative Tracking Index | CTI | 200 | |||||
| Clearance Distance (Terminal to Terminal) | 5.0 | mm | |||||
| Clearance Distance (Terminal to Heatsink) | 10.0 | mm | |||||
| Creepage Distance (Terminal to Terminal) | 6.3 | mm | |||||
| Creepage Distance (Terminal to Heatsink) | 11.5 | mm | |||||
| Rated Resistance (NTC) | RNTC | 5.0 | k | TNTC = 25C | |||
| Resistance Tolerance at 25 C (NTC) | R/R | -5 | 5 | % | |||
| Beta Value (T2 = 50 C) (NTC) | 25/50 | 3380 | K | ||||
| Beta Value (T2 = 80 C) (NTC) | 25/80 | 3468 | K | ||||
| Beta Value (T2 = 100 C) (NTC) | 25/100 | 3523 | K | ||||
| Power Dissipation (NTC) | PMax | 10 | mW | TNTC = 25C | |||
| Part Number | CAB011M12GM3 | Without Pre-Applied Phase Change Thermal Interface Material | |||||
| Part Number | CAB011M12GM3T | With Pre-Applied Phase Change Thermal Interface Material |
2410301854_Wolfspeed-CAB011A12GM3T_C20554080.pdf
Related Products
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
