High Voltage Current Silicon NPN Transistor TOSHIBA 2SC4944-GR TE85L F for Audio Frequency Amplifier
Key Attributes
Model Number:
2SC4944-GR(TE85L,F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@2mA,6V
Transition Frequency(fT):
80MHz
Type:
NPN
Vce Saturation(VCE(sat)):
250mV
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC4944-GR(TE85L,F
Package:
TSSOP-5(SC-70-5)SOT-353
Product Description
Product Overview
The TOSHIBA 2SC4944 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general-purpose amplifier applications. Key features include a small package (dual type), high voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 400), and excellent hFE linearity. It is complementary to the 2SA1873.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon NPN Epitaxial Transistor
- Process: PCT process
- Origin: Japan (implied by Toshiba)
- Weight: 6.2 mg (typ.)
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) | ||||||
| Collector-base voltage | VCBO | 60 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 5 | V | |||
| Collector current | IC | 150 | mA | |||
| Base current | IB | 30 | mA | |||
| Collector power dissipation | PC (Note 3) | Mounted on FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm2 5) | 200 | mW | ||
| Junction temperature | Tj (Note 1) | For devices with the ordering part number ending in LF(T. | 150 | C | ||
| Junction temperature | Tj (Note 2) | For devices with the ordering part number in other than LF(T. | 125 | C | ||
| Storage temperature range | Tstg (Note 1) | For devices with the ordering part number ending in LF(T. | -55 | 150 | C | |
| Storage temperature range | Tstg (Note 2) | For devices with the ordering part number in other than LF(T. | -55 | 125 | C | |
| Electrical Characteristics (Ta = 25C) (Q1, Q2 common) | ||||||
| Collector cut-off current | ICBO | VCB = 60 V, IE = 0 A | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 A | 0.1 | A | ||
| DC current gain | hFE (Note 4) | VCE = 6 V, IC = 2 mA | 120 | 400 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC = 100 mA, IB = 10 mA | 0.1 | 0.25 | V | |
| Transition frequency | fT | VCE = 10 V, IC = 1 mA | 80 | MHz | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0 A, f = 1 MHz | 2 | 3.5 | pF | |
2411220423_TOSHIBA-2SC4944-GR-TE85L-F_C5887790.pdf
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