load switch and power switching solutions using XCH XCHS1005 N channel MOSFET with low RDS ON values
Key Attributes
Model Number:
XCHS1005
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4.5A
RDS(on):
95mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.95V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21.4pF
Number:
1 N-channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
196pF
Output Capacitance(Coss):
25.9pF
Gate Charge(Qg):
4.3nC@10V
Mfr. Part #:
XCHS1005
Package:
SOT-23
Product Description
Product Overview
The XCHS1005 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Test Condition | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 4.5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 2.2 | A | |||
| IDM | Pulsed Drain Current | 11 | A | |||
| PD@TA=25 | Total Power Dissipation | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 80 | /W | ||
| Electrical Characteristics (TC=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | 110 | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1 | A |
| IGSS | Gate to Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | 1.95 | 3.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 3A | - | 95 | 140 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 1.0MHz | - | 196 | - | pF |
| Coss | Output Capacitance | - | 25.9 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 21.4 | - | pF | |
| Qg | Total Gate Charge | VDS = 50V, ID = 3A, VGS = 10V | - | 4.3 | - | nC |
| Qgs | Gate-Source Charge | - | 3.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 3.1 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 50V, IDS=3A RG = 2, VGEN = 10V | - | 14.7 | - | ns |
| tr | Turn-On Rise Time | - | 3.5 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 20.9 | - | ns | |
| tf | Turn-Off Fall Time | - | 2.7 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 4.5 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 12 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS =3A | - | - | 1.3 | V |
| trr | Body Diode Reverse Recovery Time | VGS = 0V, IF = 3A, di/dt =100A/s | - | 32.1 | - | ns |
| Qrr | Body Diode Reverse Recovery Time Charge | - | 39.4 | - | nC | |
| Irrm | Peak Reverse Recovery Current | - | 2.1 | - | A | |
2506111631_XCH-XCHS1005_C7441471.pdf
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