86--136 6733 2386
quality 650V 15A N channel MOSFET with superior switching speed XCH GSA15N65E Multi EPI Super Junction device factory
quality 650V 15A N channel MOSFET with superior switching speed XCH GSA15N65E Multi EPI Super Junction device factory

650V 15A N channel MOSFET with superior switching speed XCH GSA15N65E Multi EPI Super Junction device

Key Attributes
Model Number: GSA15N65E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
RDS(on):
260mΩ@10V,7.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
1 N-channel
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
820pF@25V
Mfr. Part #:
GSA15N65E
Package:
TO-220F
Product Description

Product Overview

The GSA/GSD15N65E is a 650V, 15A Power MOSFET from XCH Semiconductor, featuring a Multi-EPI Super-Junction platform. This N-channel MOSFET offers advanced technology for fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics, making it suitable for various power applications.

Product Attributes

  • Brand: XCH Semiconductor
  • Series: GSA/GSD15N65E
  • Voltage Rating: 650V
  • Current Rating: 15A
  • Technology: Multi-EPI Super-Junction
  • Channel Type: N-channel
  • Package Types: TO-220F, TO-252

Technical Specifications

ModelParameterConditionsMinTypMaxUnit
GSA/GSD15N65EDrain-Source Breakdown Voltage (BVDSS)VGS = 0V, ID = 250A, TJ = 25650--V
Breakdown Voltage Temperature CoefficientID = 250A, Referenced to 25-0.6-V/
Zero Gate Voltage Drain Current (IDSS)VDS = 650V, VGS = 0V, TJ = 150--10A
Gate-Body Leakage Current, Forward (IGSSF)VGS = 30V, VDS = 0V--100nA
Gate-Body Leakage Current, Reverse (IGSSR)VGS = -30V, VDS = 0V---100nA
Gate Threshold Voltage (VGS(th))VDS = VGS, ID = 250A2.5-4.5V
Static Drain-Source On-Resistance (RDS(on))VGS = 10V, ID = 7.5A-0.240.26
Forward Transconductance (gFS)VDS = 40V, ID = 7.5A-16-S
Input Capacitance (Ciss)VDS = 25V, VGS = 0V, f = 1.0MHz-820-pF
Output Capacitance (Coss)VDS = 25V, VGS = 0V, f = 1.0MHz-25-pF
GSA/GSD15N65EReverse Transfer Capacitance (Crss)VDS = 25V, VGS = 0V, f = 1.0MHz-2.2-pF
GSA/GSD15N65ETurn-On Delay Time (td(on))VDD = 400V, ID = 7.5A, RG = 20-19-ns
GSA/GSD15N65ETurn-On Rise Time (tr)VDD = 400V, ID = 7.5A, RG = 20-14-ns
GSA/GSD15N65ETurn-Off Delay Time (td(off))VDD = 400V, ID = 7.5A, RG = 20-150-ns
GSA/GSD15N65ETurn-Off Fall Time (tf)VDD = 400V, ID = 7.5A, RG = 20-11-ns
GSA/GSD15N65ETotal Gate Charge (Qg)VDS = 400V, ID = 7.5A, VGS = 10V-36-nC
GSA/GSD15N65EGate-Source Charge (Qgs)VDS = 400V, ID = 7.5A, VGS = 10V-5.3-nC
GSA/GSD15N65EGate-Drain Charge (Qgd)VDS = 400V, ID = 7.5A, VGS = 10V-22-nC
GSA/GSD15N65EMaximum Continuous Drain-Source Diode Forward Current (IS)---15A
GSA/GSD15N65EMaximum Pulsed Drain-Source Diode Forward Current (ISM)---40A
GSA/GSD15N65EDrain-Source Diode Forward Voltage (VSD)VGS = 0V, IS = 7.5A-0.91.5V
GSA/GSD15N65EReverse Recovery Time (trr)VGS = 0V, IS = 7.5A, dIF/dt =100A/s-330-ns
GSA/GSD15N65EReverse Recovery Charge (Qrr)VGS = 0V, IS = 7.5A, dIF/dt =100A/s-3.9-C
GSA15N65E (TO-220F)Thermal Resistance, Junction-to-Case (RJC)--4.0-/W
GSD15N65E (TO-252)Thermal Resistance, Junction-to-Case (RJC)--1.3-/W
GSD15N65E (TO-252)Thermal Resistance, Case-to-Sink (RCS)--0.5-/W
GSA15N65E (TO-220F)Thermal Resistance, Junction-to-Ambient (RJA)-80--/W
GSD15N65E (TO-252)Thermal Resistance, Junction-to-Ambient (RJA)-62--/W
GSA/GSD15N65EContinuous Drain Current (ID) @ TC = 25--15*-A
GSA/GSD15N65EContinuous Drain Current (ID) @ TC = 100--11*-A
GSA/GSD15N65EPulsed Drain Current (IDM)--50-A
GSA/GSD15N65EGate-Source Voltage (VGSS)--30-30V
GSA/GSD15N65ERepetitive Avalanche Energy (EAS)--280-mJ
GSA/GSD15N65EAvalanche Current (IAR)--2.3-A
GSA/GSD15N65ESingle Pulsed Avalanche Energy (EAR)--1.2-mJ
GSA/GSD15N65EPower Dissipation (PD) @ TC = 25--100-W
GSA/GSD15N65EOperating and Storage Temperature Range (TJ, TSTG)--55-150
GSA/GSD15N65EMax. Lead Temperature for Soldering (TL)1/8 from Case for 5 Seconds--300
GSA/GSD15N65EDrain Source voltage slope (dVds/dt)Vds=480V-50-V/ns

2305091658_XCH-GSA15N65E_C5455783.pdf

Related Products
quality DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability factory
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating factory
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.