N channel MOSFET UNI SEMIC APG180N10K with 100V voltage 50A continuous drain current and low on resistance
Key Attributes
Model Number:
APG180N10K
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
RDS(on):
18mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3.5pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
196pF
Input Capacitance(Ciss):
1.05nF@50V
Pd - Power Dissipation:
68W
Gate Charge(Qg):
13.9nC@10V
Mfr. Part #:
APG180N10K
Package:
TO-252
Product Description
Product Overview
The APG180N10K is a high-performance N-channel MOSFET designed for high-frequency switching applications. It offers a 100V breakdown voltage and a continuous drain current of 50A, with a low on-resistance of 15m (Typ.) at VGS = 10V and ID = 20A. Key advantages include extremely low switching loss, excellent stability and uniformity, and 100% UIS and VDS tested. It is compliant with RoHS and Halogen-Free standards.
Product Attributes
- Brand: ZHEJIANG UNIU-NE Technology CO.,LTD
- Origin: China
- Certifications: RoHS and Halogen-Free Compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | note5 | 50 | A | ||
| Continuous Drain Current (TC=100) | ID | note5 | 31.5 | A | ||
| Pulsed Drain Current | IDM | note3 | 200 | A | ||
| Power Dissipation (TC=25) | PD | note2 | 68 | W | ||
| Avalanche Current | IAS | note3,6 | 21 | A | ||
| Single Pulse Avalanche Energy | EAS | note3,6 | 103 | mJ | ||
| Thermal Resistance, Junction to Case | RJC | 1.85 | /W | |||
| Thermal Resistance, Junction to Ambient | RJA | note1,4 | 55 | /W | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | A |
| Gate to Body Leakage Current | IGSS | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.2 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A | - | 15 | 18 | m |
| Static Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID = 10A | - | 19.5 | 25 | m |
| Gate Resistance | Rg | VDS = VGS=0V,f=1.0MHz | - | 1.44 | - | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 50V, VGS = 0V, f = 1.0MHz | - | 1050 | - | pF |
| Output Capacitance | Coss | - | 196 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 3.5 | - | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS= 50V, ID = 40A, VGS = 10V | - | 13.9 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | ||
| Gate-Drain(Miller) Charge | Qg d | - | 2.4 | - | ||
| Turn-On Delay Time | td(on) | VDS = 50V, ID = 40A, RG = 3.3, VGS=10V | - | 27 | - | ns |
| Turn-On Rise Time | tr | - | 49 | - | ||
| Turn-Off Delay Time | td(off) | - | 225 | - | ||
| Turn-Off Fall Time | tf | - | 94 | - | ||
| Diode Characteristics | ||||||
| Continuous Source Current | IS | - | - | 50 | A | |
| Diode Forward Voltage | VSD | IS=20A . VGS = 0V | - | 0.88 | 1.0 | V |
| Reverse Recovery Time | trr | ISD=20A, dlSD/dt=100A/s | - | 35 | - | ns |
| Reverse Recovery Charge | Qrr | - | 34 | - | nC | |
2509301615_UNI-SEMIC-APG180N10K_C41374779.pdf
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