Synchronous buck converter MOSFET XNRUSEMI XR4406B featuring trenched N channel and low gate charge
Key Attributes
Model Number:
XR4406B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
RDS(on):
25mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
61pF
Number:
1 N-channel
Output Capacitance(Coss):
79pF
Input Capacitance(Ciss):
490pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
5.2nC@10V
Mfr. Part #:
XR4406B
Package:
SOP-8
Product Description
Product Overview
The XR4406B is a high cell density trenched N-channel MOSFET designed for high-efficiency synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approval. This fast switching MOSFET is ideal for power management solutions.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Rating/Typ. | Units | Test Condition | Min. | Typ. | Max. |
| Absolute Maximum Ratings | VDS Drain-Source Voltage | 30 | V | ||||
| VGS Gate-Source Voltage | 20 | V | |||||
| ID@TA=25 Continuous Drain Current, VGS @ 10V | 8 | A | |||||
| ID@TA=70 Continuous Drain Current, VGS @ 10V | 5.8 | A | |||||
| IDM Pulsed Drain Current | 28 | A | |||||
| EAS Single Pulse Avalanche Energy | 20 | mJ | |||||
| Thermal Data | RJA Thermal Resistance Junction-ambient | 85 | /W | --- | |||
| RJC Thermal Resistance Junction-Case | 25 | /W | --- | ||||
| PD@TA=25 Total Power Dissipation | 2.5 | W | |||||
| Electrical Characteristics | V(BR)DSS Drain-Source Breakdown Voltage | 30 | V | VGS=0V, ID=250A | 30 | - | - |
| IDSS Zero Gate Voltage Drain Current | 1.0 | A | VDS =30V, VGS = 0V | - | - | ||
| IGSS Gate to Body Leakage Current | 100 | nA | VDS =0V, VGS = 20V | - | - | ||
| VGS(th) Gate Threshold Voltage | 1.0 | V | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.5 | |
| RDS(on) Static Drain-Source on-Resistance | 14 | m | VGS=10V, ID=5.5A | - | 14 | 25 | |
| Dynamic Characteristics | Ciss Input Capacitance | 490 | pF | VDS =15V, VGS =0V, f = 1.0MHz | - | 490 | - |
| Coss Output Capacitance | 79 | pF | VDS =15V, VGS =0V, f = 1.0MHz | - | 79 | - | |
| Crss Reverse Transfer Capacitance | 61 | pF | VDS =15V, VGS =0V, f = 1.0MHz | - | 61 | - | |
| Gate Charge | Qg Total Gate Charge | 5.2 | nC | VDS =15V, ID =5.8A, VGS =10V | - | 5.2 | - |
| Qgs Gate-Source Charge | 0.9 | nC | VDS =15V, ID =5.8A, VGS =10V | - | 0.9 | - | |
| Qgd Gate-Drain(Miller) Charge | 1.3 | nC | VDS =15V, ID =5.8A, VGS =10V | - | 1.3 | - | |
| Switching Characteristics | td(on) Turn-on Delay Time | 4.5 | ns | VDS=15V, ID=3A, RGEN=3, VGS =10V | - | 4.5 | - |
| tr Turn-on Rise Time | 2.5 | ns | VDS=15V, ID=3A, RGEN=3, VGS =10V | - | 2.5 | - | |
| td(off) Turn-off Delay Time | 14.5 | ns | VDS=15V, ID=3A, RGEN=3, VGS =10V | - | 14.5 | - | |
| tf Turn-off Fall Time | 3.5 | ns | VDS=15V, ID=3A, RGEN=3, VGS =10V | - | 3.5 | - | |
| Drain-Source Diode | IS Maximum Continuous Drain to Source Diode Forward Current | 8.0 | A | - | - | ||
| ISM Maximum Pulsed Drain to Source Diode Forward Current | 23.2 | A | - | - | |||
| VSD Drain to Source Diode Forward Voltage | 1.2 | V | VGS = 0V, IS=5.8A | - | - |
2504301615_XNRUSEMI-XR4406B_C42456746.pdf
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