86--136 6733 2386
quality Load switch P channel MOSFET XYD X48P030TLM3B featuring trench power technology and reliability factory
quality Load switch P channel MOSFET XYD X48P030TLM3B featuring trench power technology and reliability factory
quality Load switch P channel MOSFET XYD X48P030TLM3B featuring trench power technology and reliability factory
quality Load switch P channel MOSFET XYD X48P030TLM3B featuring trench power technology and reliability factory

Load switch P channel MOSFET XYD X48P030TLM3B featuring trench power technology and reliability

Key Attributes
Model Number: X48P030TLM3B
Product Custom Attributes
Mfr. Part #:
X48P030TLM3B
Package:
SOT-23-3L
Product Description

Product Overview

The X48P030TLM3B is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd., featuring Trench Power MOSFET technology for excellent RDS(ON). It is RoHS and Halogen-Free compliant and suitable for load switch or other general applications.

Product Attributes

  • Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
  • Certifications: RoHS and Halogen-Free Compliant

Technical Specifications

Parameter Symbol Min Typ Max Unit Note/Test Conditions
Absolute Maximum Ratings
Drain-Source Voltage VDSS - - -30 V VGS=0V
Gate-Source Voltage VGS -20 - 20 V VDS=0V
Continuous Drain Current ID - - -4.3 A TA=25
Continuous Drain Current ID - - -3.3 A TA=70
Pulsed Drain Current IDM - - -20 A -
Maximum Power Dissipation PD - - 1.4 W TA=25 (Note 2)
Maximum Power Dissipation PD - - 0.9 W TA=70 (Note 2)
Operating Junction and Storage Temperature Range Tj,TSTG -55 - 150 -
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0V,ID=-250A
Zero Gate Voltage Drain Current IDSS - - -1 A VDS=-30V,VGS=0V
Gate-Body Leakage Current,Forward IGSSF - - 100 nA VGS=20V,VDS=0V
Gate-Body Leakage Current,Reverse IGSSR - - -100 nA VGS=-20V,VDS=0V
Gate-Source Threshold Voltage VGS(th) -0.9 - -2 V VDS=VGS,ID=-250A
Drain-Source On-State Resistance RDS(on) - 39 48 m VGS=-10V,ID=-4A
Drain-Source On-State Resistance RDS(on) - 55 78 m VGS=-4.5V,ID=-3.5A
Gate resistance Rg - 11 - VGS=0V, VDS=0V,f=1MHz
Forward Transconductance gfs - 8.2 - S VDS=-5V,ID=-4A
Dynamic Characteristics
Input Capacitance Ciss - 500 - pF VDS=-15V,VGS=0V,f=1.0MHZ
Output Capacitance Coss - 70 - pF VDS=-15V,VGS=0V,f=1.0MHZ
Reverse Transfer Capacitance Crss - 60 - pF VDS=-15V,VGS=0V,f=1.0MHZ
Turn-On Delay Time td(on) - 14 - ns VDD=-15V,RG=2.5, VGS=-10V,RL=15
Turn-On Rise Time tr - 61 - ns VDD=-15V,RG=2.5, VGS=-10V,RL=15
Turn-Off Delay Time td(off) - 19 - ns VDD=-15V,RG=2.5, VGS=-10V,RL=15
Turn-Off Fall Time tf - 10 - ns VDD=-15V,RG=2.5, VGS=-10V,RL=15
Gate Charge Characteristics
Total Gate Charge Qg - 6.8 - nC VDS=-24V,ID=-4A,VGS=-10V
Gate-Source Charge Qgs - 1 - nC VDS=-24V,ID=-4A,VGS=-10V
Gate-Drain Charge Qg d - 1.4 - nC VDS=-24V,ID=-4A,VGS=-10V
Reverse Diode
Continuous Diode Forward Current IS - - -4.3 A -
Diode Forward Voltage VSD - - -1.2 V IS=-4A,VGS=0V
Body Diode Reverse Recovery Time trr - 11 - ns VGS=0V,Is=-4.0A, dI/dt=-100A/s
Body Diode Reverse Recovery Charge Qrr - 2.6 - nC VGS=0V,Is=-4.0A, dI/dt=-100A/s

2509251450_XYD-X48P030TLM3B_C51952853.pdf

Related Products
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version factory
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications factory
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.