SOT23 Package Power MOSFET TWGMC SI2301B for Portable Electronics and DC DC Converter Load Switching
Key Attributes
Model Number:
SI2301B
Product Custom Attributes
Mfr. Part #:
SI2301B
Package:
SOT-23
Product Description
Product Overview
The SI2305/AO3401/SI2301B is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management and is available in a SOT-23 package.
Product Attributes
- Brand: tw-gmc
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (Ta=25) | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 10 | V | |||
| ID | Continuous Drain Current | -2.3 | A | |||
| IS | Continuous Source-Drain Current (Diode Conduction) | -0.6 | A | |||
| PD | Power Dissipation | 400 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient (t5s) | 350 | /W | |||
| TJ, Tstg | Operation Junction And Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-source breakdown voltage | VGS=0, ID=250A | -20 | V | ||
| VGS(th) | Gate-threshold voltage | VDS= VGS, ID=250A | -0.4 | -1.0 | V | |
| IGSS | Collector cut-off current | VDS=0, VGS=10V | 100 | nA | ||
| IDSS | Collector cut-off current | VDS=-20V, VGS=0V | -1 | A | ||
| RDS(on) | Drain-source on-resistance | VGS=-4.5V, ID=-2A | 110 | 130 | m | |
| RDS(on) | Drain-source on-resistance | VGS=-2.5V, ID=-1A | 145 | 170 | m | |
| gFS | Forward transconductance | VDS=-5V, ID=-2.0A | 4 | S | ||
| VSD | Diode forward voltage | IS=-1A,VGS=0V | -1.2 | V | ||
| Dynamic | ||||||
| Qg | Total gate charge | VDS=-10V, VGS=-4.5V, ID=-2.0A | 5.5 | 10 | nC | |
| Qgs | Gate-source charge | |||||
| Qgd | Gate-drain charge | |||||
| Ciss | Input capacitance | VDS=10V, VGS=0V, f=1MHz | 400 | pF | ||
| Coss | Output capacitance | 90 | pF | |||
| Crss | Reverse transfer capacitance | 70 | pF | |||
| Switching | ||||||
| td(on) | Turn-on delay time | VDS=-10V, RL=10, ID-1A, VGEN=-4.5V, Rg=1 | 11 | nS | ||
| tr | Rise time | 35 | nS | |||
| td(off) | Turn-off delay time | 32 | nS | |||
| tf | Fall time | 12 | nS | |||
2510141655_TWGMC-SI2301B_C52117626.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
