Low resistance N Channel MOSFET VBsemi Elec IRF8736TRPBF VB designed for high side switching in CPUs
Key Attributes
Model Number:
IRF8736TRPBF-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
73pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
820pF@15V
Gate Charge(Qg):
6.8nC@10V
Mfr. Part #:
IRF8736TRPBF-VB
Package:
SO-8
Product Description
IRF8736TRPBF-VB N-Channel 30-V (D-S) MOSFET
The IRF8736TRPBF-VB is a high-performance N-Channel Trench Power MOSFET optimized for high-side synchronous rectifier operation. It features low on-resistance and is suitable for demanding applications like notebook CPU core high-side switching.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 30 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.0 | 3.0 | V | |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30 V, VGS = 0 V | 1 | A | ||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 20 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 11 A | 0.004 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5 V, ID = 10 A | 0.005 | |||
| Forward Transconductance | gfs | VDS = 15 V, ID = 11 A | 52 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 820 | pF | ||
| Output Capacitance | Coss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 195 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 73 | pF | ||
| Total Gate Charge | Qg | VDS = 15 V, VGS = 10 V, ID = 11 A | 15 | 23 | nC | |
| Gate-Source Charge | Qgs | VDS = 15 V, VGS = 5 V, ID = 11 A | 6.8 | 10.2 | nC | |
| Gate-Drain Charge | Qgd | VDS = 15 V, VGS = 5 V, ID = 11 A | 2.5 | nC | ||
| Gate Resistance | Rg | f = 1 MHz | 0.36 | 1.8 | ||
| Body Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | IS | TC = 25 C | 25 | A | ||
| Body Diode Voltage | VSD | IS = 9 A | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 9 A, dI/dt = 100 A/s, TJ = 25 C | 15 | 30 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = 9 A, dI/dt = 100 A/s, TJ = 25 C | 6 | 12 | nC | |
2504211017_VBsemi-Elec-IRF8736TRPBF-VB_C6705277.pdf
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