high speed switching device VBsemi Elec VBM16I15 designed for power supplies and industrial welding systems
Key Attributes
Model Number:
VBM16I15
Product Custom Attributes
Mfr. Part #:
VBM16I15
Package:
TO-220
Product Description
Product Overview
The VBM16I15 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. This IGBT is avalanche energy rated (UIS) and offers a maximum junction temperature of 175C, ensuring reliability in harsh environments. Key applications include telecommunications (server and telecom power supplies), lighting (HID and fluorescent ballast lighting), consumer and computing (ATX power supplies), industrial (welding, battery chargers), renewable energy (solar PV inverters), and switch mode power supplies (SMPS).
Product Attributes
- Brand: VBsemi
- Package Type: TO-220
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| VCE | VCE | 600 | V | |||
| IC | IC | (TC=25) | 30 | A | ||
| IC | IC | (TC=100) | 15 | A | ||
| VCE(sat) | VCE(sat) | 1.6 | V | |||
| Qg | Qg | 65 | nC | |||
| ICM | ICM | 45 | A | |||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Collector-Emitter Voltage | VCE | (TC = 25 C, unless otherwise noted) | 600 | V | ||
| Gate-Emitter Voltage | VGE | 30 | V | |||
| Continuous Collector Current | IC | TC = 25 C, VGE at 15 V | 30 | A | ||
| Continuous Collector Current | IC | TC = 100 C, VGE at 15 V | 15 | A | ||
| Pulsed Collector Current | ICM | a | 45 | A | ||
| Maximum Power Dissipation | PD | TC = 25 C | 170 | W | ||
| Maximum Power Dissipation | PD | TC = 100 C | 31 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | +175 | C | ||
| Short Circuit Withstand Time | tSC | TC=150, VGE= 15V, VCE400V | 3 | s | ||
| Short Circuit Withstand Time | tSC | TC=100, VGE= 15V, VCE330V | 5 | s | ||
| Soldering Recommendations (Peak Temperature) | for 10 s | 260 | C | |||
| THERMAL RESISTANCE RATINGS | ||||||
| Maximum Junction-to-Ambient | RthJA | 40 | 80 | C/W | ||
| Maximum Junction-to-Case | RthJC | 0.88 | 4.8 | C/W | ||
| SPECIFICATIONS | ||||||
| Collector-Emitter Breakdown Voltage | BVCE | VGE = 0 V, IC = 250 A | 600 | - | - | V |
| Collector-Emitter Breakdown Voltage | BVCE | VGE = 0 V, IC = 1 mA | 600 | - | - | V |
| Gate-Source Threshold Voltage | VGE(th) | VCE = VGE, ID = 250 A | 4 | 5 | 6 | V |
| Zero Gate Voltage Collector Current | ICES | VCE = 480V,VGE = 0 V,TJ = 25 C | - | 1 | 20 | A |
| Zero Gate Voltage Collector Current | ICES | VCE = 480 V,VGE = 0 V,TJ = 150 C | - | 1000 | - | A |
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGS = 20 V | - | - | 2 | nA |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 30 A | - | - | 1.6 | V |
| Forward Transconductance | gfs | VCE = 20 V, IC = 30 A | - | 16 | - | S |
| Input Capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 500 KHz | - | 1800 | - | pF |
| Output Capacitance | Coes | - | 82 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 12 | - | pF | |
| Turn-on Energy | Eon | VCS = 400 V , VGE = 0 /15V, IC = 30 A, Rg = 10 | - | 0.62 | - | J |
| Turn-off Energy | Eoff | VCS = 400 V , VGE = 0 /15V, IC = 30 A, Rg = 10 | - | 0.31 | - | J |
| Total Gate Charge | Qg | VGE = 15 V, IC = 30 A, VCE = 400 V | - | 65 | - | nC |
| Gate-Emitter Charge | Qge | - | 14 | - | nC | |
| Gate to Collector Charge | Qgc | - | 13 | - | nC | |
| Turn-On Delay Time | td(on) | - | 60 | - | ns | |
| Rise Time | tr | - | 43 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 184 | - | ns | |
| Fall Time | tf | - | 30 | - | ns | |
| Internal emitter inductance | LE | measured 5 mm | - | 1.35 | - | nH |
| Diode Forward Current | IF | - | - | 15 | A | |
| Pulsed Diode Forward Current | IFM | - | - | 45 | A | |
| Diode Forward Voltage | VF | IF = 30 A | - | - | 2.0 | V |
| Reverse Recovery Time | trr | TJ = 25 C, IF = 30 A, dIF/dt = 200 A/s, VR = 400 V | - | 73 | - | ns |
| Reverse Recovery Charge | Qrr | - | 45 | - | C | |
| Reverse Recovery Current | IRRM | - | 13 | - | A | |
| DIM. | MILLIMETERS | INCHES | ||
|---|---|---|---|---|
| MIN. | MAX. | MIN. | MAX. | |
| A | 4.25 | 4.65 | 0.167 | 0.183 |
| b | 0.69 | 1.01 | 0.027 | 0.040 |
| b(1) | 1.20 | 1.73 | 0.047 | 0.068 |
| c | 0.36 | 0.61 | 0.014 | 0.024 |
| D | 14.85 | 15.49 | 0.585 | 0.610 |
| E | 10.04 | 10.51 | 0.395 | 0.414 |
| e | 2.41 | 2.67 | 0.095 | 0.105 |
| e(1) | 4.88 | 5.28 | 0.192 | 0.208 |
| F | 1.14 | 1.40 | 0.045 | 0.055 |
| H(1) | 6.09 | 6.48 | 0.240 | 0.255 |
| J(1) | 2.41 | 2.92 | 0.095 | 0.115 |
| L | 13.35 | 14.02 | 0.526 | 0.552 |
| L(1) | 3.32 | 3.82 | 0.131 | 0.150 |
| P | 3.54 | 3.94 | 0.139 | 0.155 |
| Q | 2.60 | 3.00 | 0.102 | 0.118 |
2412131800_VBsemi-Elec-VBM16I15_C42412447.pdf
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