power management solution featuring VBsemi Elec STS7NF60L-VB N Channel Trench Power MOSFET for low side applications
Key Attributes
Model Number:
STS7NF60L-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V;15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
STS7NF60L-VB
Package:
SO-8
Product Description
Product Overview
The STS7NF60L-VB is a high-performance N-Channel Trench Power MOSFET designed for efficient synchronous rectifier operation in low-side applications. It offers excellent thermal performance and is optimized for demanding power supply designs.
Product Attributes
- Certifications: Halogen-free According to IEC 61249-2-21 Definition
- Brand: VBsemi
- Origin: Taiwan
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 60 | V | ||
| VDS Temperature Coefficient | VDS/TJ | ID = 250 A | 55 | mV/C | ||
| VGS(th) Temperature Coefficient | VGS(th)/TJ | VDS = VGS, ID = 250 A | -6.3 | mV/C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.0 | 3.0 | V | |
| Gate-Source Leakage | IGSS | VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V, TJ = 55 C | 10 | A | ||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 25 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 4.6 A | 0.012 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5 V, ID = 4.2 A | 0.015 | |||
| Forward Transconductance | gfs | VDS = 15 V, ID = 4.6 A | 20 | S | ||
| Input Capacitance | Ciss | VDS = 30 V, VGS = 0 V, f = 1 MHz | 1100 | pF | ||
| Output Capacitance | Coss | VDS = 30 V, VGS = 0 V, f = 1 MHz | 90 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 30 V, VGS = 0 V, f = 1 MHz | 55 | pF | ||
| Total Gate Charge | Qg | VDS = 30 V, VGS = 10 V, ID = 4.6 A | 21 | 32 | nC | |
| Gate-Source Charge | Qgs | VDS = 30 V, VGS = 4.5 V, ID = 4.6 A | 10.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 30 V, VGS = 4.5 V, ID = 4.6 A | 3.5 | 4.2 | nC | |
| Gate Resistance | Rg | f = 1 MHz | 3.3 | 5 | ||
| Turn-On Delay Time | td(on) | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1 | 20 | 30 | ns | |
| Rise Time | tr | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1 | 150 | 225 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1 | 20 | 30 | ns | |
| Fall Time | tf | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 4.5 V, Rg = 1 | 60 | 90 | ns | |
| Turn-On Delay Time | td(on) | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1 | 10 | 15 | ns | |
| Rise Time | tr | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1 | 15 | 25 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1 | 25 | 40 | ns | |
| Fall Time | tf | VDD = 30 V, RL = 5.4 , ID 5.6 A, VGEN = 10 V, Rg = 1 | 10 | 15 | ns | |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | 4.2 | A | ||
| Pulse Diode Forward Current | ISM | 25 | A | |||
| Body Diode Voltage | VSD | IS = 2 A | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C | 25 | 50 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C | 25 | 50 | nC | |
| Reverse Recovery Fall Time | ta | IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C | 19 | ns | ||
| Reverse Recovery Rise Time | tb | IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C | 6 | ns | ||
| Continuous Drain Current | ID | TC = 25 C, TJ = 150 C | 11 | A | ||
| Continuous Drain Current | ID | TC = 70 C, TJ = 150 C | 8.0b, c | A | ||
| Pulsed Drain Current | IDM | 25 | A | |||
| Continuous Source-Drain Diode Current | IS | TA = 25 C | 4.2 | A | ||
| Continuous Source-Drain Diode Current | IS | TA = 70 C | 2.1b, c | A | ||
| Avalanche Current | IAS | L = 0.1 mH | 15 | A | ||
| Single-Pulse Avalanche Energy | EAS | 11.2 | mJ | |||
| Maximum Power Dissipation | PD | TC = 25 C | 5 | W | ||
| Maximum Power Dissipation | PD | TC = 70 C | 3.2 | W | ||
| Maximum Power Dissipation | PD | TA = 25 C | 1.6b, c | W | ||
| Maximum Power Dissipation | PD | TA = 70 C | 1.0b, c | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | C | ||
| Maximum Junction-to-Ambient | RthJA | t 10 s | 38 | 50 | C/W | |
| Maximum Junction-to-Foot (Drain) | RthJF | Steady State | 20 | 25 | S |
2504180925_VBsemi-Elec-STS7NF60L-VB_C692970.pdf
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