P Channel 20 Volt MOSFET VBsemi Elec NTMS10P02R2G VB for portable devices battery switches and charger switches
Key Attributes
Model Number:
NTMS10P02R2G-VB
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V;21mΩ@2.5V;40mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
19W
Gate Charge(Qg):
50nC@8V
Mfr. Part #:
NTMS10P02R2G-VB
Package:
SO-8
Product Description
Product Overview
The NTMS10P02R2G-VB is a P-Channel 20-V (D-S) Trench Power MOSFET designed for portable devices. It offers low on-resistance and is 100% Rg tested, compliant with RoHS directives. Key applications include load switches, battery switches, and charger switches.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free According to IEC 61249-2-21 Definition, Compliant to RoHS Directive 2002/95/EC
- Origin: Taiwan
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = - 250 A | - 20 | V | ||
| VDS Temperature Coefficient | VDS/TJ | ID = - 250 A | - 12 | mV/C | ||
| VGS(th) Temperature Coefficient | VGS(th)/TJ | VDS = VGS, ID = - 250 A | - 0.5 | mV/C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | - 1.2 | V | ||
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 12 V | 20 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = - 20 V, VGS = 0 V | - 1 | A | ||
| VDS = - 20 V, VGS = 0 V, TJ = 55 C | - 10 | A | ||||
| On-State Drain Current | ID(on) | VDS - 5 V, VGS = - 4.5 V | - 20 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 4.5 V, ID = - 5.6 A | 0.015 | |||
| VGS = - 2.5 V, ID = - 5.3 A | 0.021 | |||||
| VGS = - 1.8 V, ID = - 2.5 A | 0.040 | |||||
| Forward Transconductance | gfs | VDS = - 10 V, ID = - 5.6 A | 35 | S | ||
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS = - 10 V, VGS = - 8 V, ID = - 5.6 A | 50 | 75 | nC | |
| Gate-Source Charge | Qgs | VDS = - 10 V, VGS = - 4.5 V, ID = - 5.6 A | 20 | 30 | nC | |
| Gate-Drain Charge | Qgd | 3.3 | 8.4 | nC | ||
| Gate Resistance | Rg | f = 1 MHz | 0.2 | 2 | k | |
| Turn-On Delay Time | td(on) | VDD = - 10 V, RL = 1 , ID - 5 A, VGEN = - 4.5 V, Rg = 1 | 0.71 | 1.1 | s | |
| Rise Time | tr | 1.7 | 2.6 | s | ||
| Turn-Off Delay Time | td(off) | 6 | 9 | s | ||
| Fall Time | tf | 3.2 | 5 | s | ||
| Turn-On Delay Time | td(on) | VDD = - 10 V, RL = 1 , ID - 5 A, VGEN = - 10 V, Rg = 1 | 0.3 | 0.45 | s | |
| Rise Time | tr | 0.6 | 0.9 | s | ||
| Turn-Off Delay Time | td(off) | 10 | 15 | s | ||
| Fall Time | tf | 3.5 | 5.5 | s | ||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | IS | TC = 25 C | - 6 | A | ||
| Pulse Diode Forward Current | ISM | - 50 | A | |||
| Body Diode Forward Voltage | VSD | IS = - 5 A, VGS = 0 V | - 0.85 | - 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = - 6 A, dI/dt = 100 A/s, TJ = 25 C | 30 | 60 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 20 | 40 | nC | ||
| Reverse Recovery Fall Time | t a | 13 | ns | |||
| Reverse Recovery Rise Time | t b | 17 | ns | |||
2504180925_VBsemi-Elec-NTMS10P02R2G-VB_C693351.pdf
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