86--136 6733 2386
quality Power transistor WeEn PHE13003C 412 designed for in CFL and off line self oscillating power supplies factory
quality Power transistor WeEn PHE13003C 412 designed for in CFL and off line self oscillating power supplies factory

Power transistor WeEn PHE13003C 412 designed for in CFL and off line self oscillating power supplies

Key Attributes
Model Number: PHE13003C,412
Product Custom Attributes
Current - Collector Cutoff:
100uA
DC Current Gain:
5@1A,2V
Transition Frequency(fT):
-
Vce Saturation(VCE(sat)):
1.5V
Type:
NPN
Pd - Power Dissipation:
2.1W
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
PHE13003C,412
Package:
TO-92
Product Description

WeEn Semiconductors PHE13003C NPN Power Transistor

The PHE13003C is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching speeds, high typical DC current gain, and a high voltage capability of 700 V, along with very low switching and conduction losses. This transistor is suitable for use in compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.

Product Attributes

  • Brand: WeEn Semiconductors
  • Product Type: NPN power transistor
  • Package: SOT54 (TO-92)

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
General
ICcollector current---1.5A
Ptottotal power dissipationTlead ≤ 25 °C; Fig. 1--2.1W
VCESMcollector-emitter peak voltageVBE = 0 V--700V
Static Characteristics
hFEDC current gainIC = 0.5 A; VCE = 2 V; Tlead = 25 °C81725-
hFEDC current gainIC = 1 A; VCE = 2 V; Tlead = 25 °C5915-
ICEScollector-emitter cut-off current (base shorted)VBE = 0 V; VCE = 700 V; Tj = 125 °C--5mA
ICEOcollector-emitter cut-off current (base open)VBE = 0 V; VCE = 700 V; Tj = 25 °C--1mA
VCEOsuscollector-emitter sustaining voltage (base open)IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 °C; Fig. 3; Fig. 4400--V
VCEsatcollector-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 °C--0.5V
VBEsatbase-emitter saturation voltageIC = 0.5 A; IB = 0.1 A; Tlead = 25 °C--1V
Dynamic Characteristics
tonturn-on timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6--1µs
tsstorage timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6--4µs
tffall timeIC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6--0.7µs

2410010400_WeEn-PHE13003C-412_C256388.pdf

Related Products
quality General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage factory
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications factory
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.