Automotive Grade N Channel MOSFET YANGJIE YJG60G10BQ with AEC Q101 Qualification and RoHS Compliance
Key Attributes
Model Number:
YJG60G10BQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
RDS(on):
15mΩ@4.5V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.5nF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
36nC@13V
Mfr. Part #:
YJG60G10BQ
Package:
PDFN-8L(5.9x5.2)
Product Description
Product Overview
The YJG60G10BQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd., featuring split gate trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for high-frequency switching, synchronous rectification, and automotive systems (12V, 24V, and 48V). The device is 100% UIS and VDS tested, with a VDS of 100V and ID of 60A.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJG60G10BQ
- Certifications: AEC-Q101 qualified (indicated by suffix "Q"), RoHS compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | Tc=25 | 60 | A | ||
| Drain Current | ID | Tc=125 | 28 | A | ||
| Pulsed Drain Current | IDM | 240 | A | |||
| Avalanche energy | EAS | 200 | mJ | |||
| Total Power Dissipation | PD | Tc=25 | 78 | W | ||
| Total Power Dissipation | PD | Tc=125 | 15 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 92 | 100 | /W | |
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 1.3 | 1.6 | /W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250μA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 1 | 1.8 | 2.8 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 8.0 | 12 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | 9.5 | 15 | mΩ | |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 1.3 | V | ||
| Maximum Body-Diode Continuous Current | IS | 60 | A | |||
| Gate resistance | RG | f=1MHz, Open drain | 1 | Ω | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHZ | 2500 | pF | ||
| Output Capacitance | Coss | 1385 | pF | |||
| Reverse Transfer Capacitance | Crss | 45 | pF | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=13V,VDS=50V,ID=30A | 36.0 | nC | ||
| Gate-Source Charge | Qgs | 6.3 | ||||
| Gate-Drain Charge | Qg | 13.8 | ||||
| Reverse Recovery Chrage | Qrr | VGS=0V,di/dt=100A/us,IS=30A | 280 | |||
| Reverse Recovery Time | trr | 10.5 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=13V,VDD=50V,IDS=30A RGEN=2.3Ω | 12 | |||
| Turn-on Rise Time | tr | 62 | ||||
| Turn-off Delay Time | tD(off) | 24.5 | ||||
| Turn-off fall Time | tf | 3.5 | ||||
2408011042_YANGJIE-YJG60G10BQ_C5811312.pdf
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