Industrial grade triac WEIDA BTA10-800BW designed for inductive loads and high dvdt rate applications
Key Attributes
Model Number:
BTA10-800BW
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
10A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
100A
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTA10-800BW
Package:
TO-220
Product Description
Product Overview
The BTA10/BTB10 series 10A Triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high current shock loading with excellent dv/dt rates and strong resistance to electromagnetic interference. They offer high commutation performance, with 3-quadrant products particularly recommended for inductive loads. The BTA10 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards (File ref: E516503).
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Series: BTA10/BTB10 Series
- Current Rating: 10A
- Certifications: UL standards (File ref: E516503)
Technical Specifications
| Parameter | Symbol | Value | Unit | Description |
| RMS On-State Current | IT(RMS) | 10 | A | |
| Repetitive Peak Off-State Voltage | VDRM | 600/800 | V | (Tj=25) |
| Repetitive Peak Reverse Voltage | VRRM | 600/800 | V | (Tj=25) |
| Non-Repetitive Surge Peak On-State Current | ITSM | 100 | A | (full cycle, F=50Hz) |
| I2t Value for Fusing | I2t | 55 | A2s | (tp=10ms) |
| Critical Rate of Rise of On-State Current | dI/dt | 50 | A/s | (IG=2IGT) |
| Peak Gate Current | IGM | 4 | A | |
| Average Gate Power Dissipation | PG(AV) | 1 | W | |
| Peak Gate Power | PGM | 5 | W | |
| Storage Junction Temperature Range | Tstg | -40~150 | ||
| Operating Junction Temperature Range | Tj | -40~125 | ||
| On-State Voltage (Max) | VTM | 1.5 | V | (ITM=14A, tp=380s, Tj=25) |
| Off-State Current (Max) | IDRM/IRRM | 5 | A | (VDRM=VRRM, Tj=25) |
| Off-State Current (Max) | IDRM/IRRM | 1 | mA | (VDRM=VRRM, Tj=125) |
| Junction to Case Thermal Resistance | Rth(j-c) | 1.6 - 2.7 | /W | (AC, varies by package) |
Electrical Characteristics (Tj=25 unless otherwise specified)
| Parameter | Test Condition | Quadrant | Value | Unit |
| Gate Trigger Current | VD=12V, RL=33 | -- | MAX 5 - 50 | mA |
| Gate Trigger Voltage | VD=VDRM | -- | 1.5 | V |
| Holding Current | IT=100mA | MAX 10 - 60 | mA | |
| Latching Current | IG=1.2IGT | - | MAX 20 - 70 | mA |
| Latching Current | IG=1.2IGT | MAX 25 - 90 | mA | |
| Critical Rate of Rise of On-State Current | VD=2/3VDRM, Tj=125, Gate open | MIN 50 - 1000 | V/s |
Ordering Information Example
BTA10-600CW
- B: Triac
- T: IT(RMS)=10A
- A: Insulated
- 10: 10A
- 600: VDRM/VRRM = 600V
- C: IGT1-3 35mA, IGT4 70mA
- W: Quadrant -- IGT 35mA
2410122027_WEIDA-BTA10-800BW_C2900914.pdf
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