Silicon Carbide Half Bridge Module Wolfspeed CAB006A12GM3 for EV Chargers and Renewable Energy Systems
Key Attributes
Model Number:
CAB006A12GM3
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-40℃~+150℃
RDS(on):
6.9mΩ@15V
Gate Threshold Voltage (Vgs(th)):
3.6V@69mA
Input Capacitance(Ciss):
20.4nF
Mfr. Part #:
CAB006A12GM3
Product Description
Product Overview
The Wolfspeed CAB006A12GM3/CAB006A12GM3T is a 1200 V, 6 m Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low loss. It features zero turn-off tail current from the MOSFET, a normally-off, fail-safe device operation, and an Aluminum Nitride Ceramic Substrate. This module enables compact, lightweight systems with increased efficiency due to the low switching and conduction losses of SiC, leading to reduced thermal requirements and system cost. It is ideal for applications such as DC-DC converters, EV chargers, high-efficiency converters/inverters, renewable energy systems, and smart-grid/grid-tied distributed generation.
Product Attributes
- Brand: Wolfspeed
- Registered Trademarks: Wolfspeed, Wolfstreak logo
- Trademark: Wolfspeed logo
- Material: Silicon Carbide (SiC), Aluminum Nitride Ceramic Substrate
- RoHS Compliance: Compliant with EU Directive 2011/65/EC (RoHS2)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 1200 | V | ||||
| RDS(on) | 6 | m | |||||
| Gate-Source Voltage, Maximum Value | VGS max | -8 | +19 | V | Transient, < 100 ns | Fig. 33 | |
| Gate-Source Voltage, Recommended | VGS op | -4 | +15 | V | |||
| DC Continuous Drain Current (TVJ 150 C) | ID | 200 | A | VGS = 15 V, THS = 75 C, TVJ 150 C | Fig. 20, Note 1 | ||
| DC Continuous Drain Current (TVJ 175 C) | ID | 200 | A | VGS = 15 V, THS = 75 C, TVJ 175 C | |||
| DC Source-Drain Current (Body Diode) | ISD BD | 166 | A | VGS = -4 V, THS = 75 C, TVJ 175 C | |||
| Pulsed Drain Current | ID (pulsed) | 400 | A | tPmax limited by TVJmax, VGS = 15 V, THS = 75 C | |||
| Virtual Junction Temperature | TVJ op | -40 | 150 | C | Operation | ||
| Virtual Junction Temperature | TVJ | -40 | 175 | C | Intermittent with Reduced Life | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 69 mA | |
| Gate Threshold Voltage (at 150C) | VGS(th) | 2.1 | V | VDS = VGS, ID = 69 mA, TVJ = 150 C | |||
| Zero Gate Voltage Drain Current | IDSS | 6 | 114 | A | VGS = 0 V, VDS = 1200 V | ||
| Gate-Source Leakage Current | IGSS | 0.06 | 1.5 | A | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance (Devices Only) | RDS(on) | 5.3 | 6.9 | m | VGS = 15 V, ID = 200 A | Fig. 2, Fig. 3 | |
| Drain-Source On-State Resistance (at 150C) | RDS(on) | 8.5 | m | VGS = 15 V, ID = 200 A, TVJ = 150 C | |||
| Drain-Source On-State Resistance (at 175C) | RDS(on) | 9.6 | m | VGS = 15 V, ID = 200 A, TVJ = 175 C | |||
| Transconductance | gfs | 162 | S | VDS = 20 V, ID = 200 A | Fig. 4 | ||
| Transconductance (at 150C) | gfs | 145 | S | VDS = 20 V, ID = 200 A, TVJ = 150 C | |||
| Turn-On Switching Energy (TVJ = 25 C) | EOn | 4.76 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 1.5 , L = 40 H | Fig. 11, Fig. 13 | ||
| Turn-On Switching Energy (TVJ = 125 C) | EOn | 5.12 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 1.5 , L = 40 H | Fig. 11, Fig. 13 | ||
| Turn-On Switching Energy (TVJ = 150 C) | EOn | 5.41 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 1.5 , L = 40 H | Fig. 11, Fig. 13 | ||
| Turn-Off Switching Energy (TVJ = 25 C) | EOff | 0.44 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 1.5 , L = 40 H | Fig. 11, Fig. 13 | ||
| Turn-Off Switching Energy (TVJ = 125 C) | EOff | 0.45 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 1.5 , L = 40 H | Fig. 11, Fig. 13 | ||
| Turn-Off Switching Energy (TVJ = 150 C) | EOff | 0.46 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 1.5 , L = 40 H | Fig. 11, Fig. 13 | ||
| Internal Gate Resistance | RG(int) | 1.12 | f = 100 kHz, VAC = 25 mV | ||||
| Input Capacitance | Ciss | 20.4 | nF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Output Capacitance | Coss | 0.79 | nF | ||||
| Reverse Transfer Capacitance | Crss | 43 | pF | ||||
| Gate to Source Charge | QGS | 240 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 200 A, Per IEC60747-8-4 pg 21 | |||
| Gate to Drain Charge | QGD | 204 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 200 A, Per IEC60747-8-4 pg 21 | |||
| Total Gate Charge | QG | 708 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 200 A, Per IEC60747-8-4 pg 21 | |||
| FET Thermal Resistance, Junction to Heatsink | Rth JHS | 0.132 | C/W | Measured with Pre-Applied TIM | Fig. 17 | ||
| Body Diode Forward Voltage | VSD | 4.9 | V | VGS = -4 V, ISD = 200 A | Fig. 7 | ||
| Body Diode Forward Voltage (at 150C) | VSD | 4.4 | V | VGS = -4 V, ISD = 200 A, TVJ = 150 C | |||
| Reverse Recovery Time | tRR | 29 | ns | VGS = -4 V, ISD = 200 A, VR = 600 V, di/dt = 20.0 A/ns, TVJ = 150 C | Fig. 32 | ||
| Reverse Recovery Charge | QRR | 4.8 | C | ||||
| Peak Reverse Recovery Current | IRRM | 275 | A | ||||
| Reverse Recovery Energy (TVJ = 25 C) | ERR | 0.14 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(ON) = 1.5 , L = 40 H | Fig. 14 | ||
| Reverse Recovery Energy (TVJ = 125 C) | ERR | 0.45 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(ON) = 1.5 , L = 40 H | Fig. 14 | ||
| Reverse Recovery Energy (TVJ = 150 C) | ERR | 0.63 | mJ | VDD = 600 V, ID = 200 A, VGS = -4 V/15 V, RG(ON) = 1.5 , L = 40 H | Fig. 14 | ||
| Package Resistance, M1 (High-Side) | RHS | 1.37 | m | TC = 125C, ID = 200 A | Note 2 | ||
| Package Resistance, M2 (Low-Side) | RLS | 1.25 | m | TC = 125C, ID = 200 A | Note 2 | ||
| Stray Inductance | LStray | 7.1 | nH | Between DC- and DC+, f = 10 MHz | |||
| Case Temperature | TC | -40 | 125 | C | |||
| Mounting Torque | MS | 2.0 | 2.3 | N-m | M4 bolts | ||
| Weight | W | 39 | g | ||||
| Case Isolation Voltage | Visol | 3 | kV | AC, 50 Hz, 1 minute | |||
| Comparative Tracking Index | CTI | 200 | |||||
| Clearance Distance (Terminal to Terminal) | 5.0 | mm | |||||
| Clearance Distance (Terminal to Heatsink) | 10.0 | mm | |||||
| Creepage Distance (Terminal to Terminal) | 6.3 | mm | |||||
| Creepage Distance (Terminal to Heatsink) | 11.5 | mm | |||||
| Rated Resistance (NTC) | RNTC | 5.0 | k | TNTC = 25C | |||
| Resistance Tolerance at 25 C (NTC) | R/R | -5 | 5 | % | |||
| Beta Value (T2 = 50 C) (NTC) | 25/50 | 3380 | K | ||||
| Beta Value (T2 = 80 C) (NTC) | 25/80 | 3468 | K | ||||
| Beta Value (T2 = 100 C) (NTC) | 25/100 | 3523 | K | ||||
| Power Dissipation (NTC) | PMax | 10 | mW | TNTC = 25C | |||
| Model | Part Number | Description | |||||
| CAB006A12GM3 | Without Pre-Applied Phase Change Thermal Interface Material | ||||||
| CAB006A12GM3T | With Pre-Applied Phase Change Thermal Interface Material | ||||||
2410301853_Wolfspeed-CAB006A12GM3_C20544163.pdf
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