Power MOSFET N channel Multi EPI Super Junction XCH GSA11N65E designed for power switching circuits
Key Attributes
Model Number:
GSA11N65E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.5pF
Number:
1 N-channel
Pd - Power Dissipation:
31W
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
720pF
Gate Charge(Qg):
32nC
Mfr. Part #:
GSA11N65E
Package:
TO-220F
Product Description
Product Overview
The GSA/GSD11N65E is a low-voltage N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. Designed with advanced technology, it offers superior characteristics including fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche performance. This platform supports voltage ratings up to 1000 volts and is suitable for various power applications.
Product Attributes
- Brand: XCH Semiconductor
- Series: GSx11N65E
- Technology: Multi-EPI Super-Junction
- Channel Type: N-channel
Technical Specifications
| Symbol | Parameter | GSA11N65E | GSD11N65E | Unit |
| Absolute Maximum Ratings | ||||
| VDSS | Drain-Source Voltage | 650 | 650 | V |
| ID | Drain Current -Continuous (TC = 25) | 11* | 11* | A |
| ID | Drain Current -Continuous (TC = 100) | 7* | 7* | A |
| IDM | Drain Current - Pulsed | 42 | 42 | A |
| VGSS | Gate-Source voltage | ±30 | ±30 | V |
| EAS | Single Pulsed Avalanche Energy | 260 | 260 | mJ |
| IAR | Avalanche Current | 2 | 2 | A |
| EAR | Repetitive Avalanche Energy | 1 | 1 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 15 | 15 | V/ns |
| dVds/dt | Drain Source voltage slope (Vds=480V) | 50 | 50 | V/ns |
| PD | Power Dissipation (TC = 25) | 31 | 31 | W |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Max. Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds | 300 | ||
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction-to-Case | 4.0 | 1.3 | /W |
| RCS | Thermal Resistance, Case-to-Sink | -- | 0.5 | /W |
| RJA | Thermal Resistance, Junction-to-Ambient | 80 | 62 | /W |
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||
| Off Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage | 650 | 650 | V |
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient | 0.6 | 0.6 | V/ |
| IDSS | Zero Gate Voltage Drain Current | 10 | 10 | µA |
| IGSSF | Gate-Body Leakage Current, Forward | 100 | 100 | nA |
| IGSSR | Gate-Body Leakage Current, Reverse | -100 | -100 | nA |
| On Characteristics | ||||
| VGS(th) | Gate Threshold Voltage | 2.5 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | 0.42 | 0.42 | Ω |
| gFS | Forward Transconductance | 16 | 16 | S |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | 720 | 720 | pF |
| Coss | Output Capacitance | 20 | 20 | pF |
| Crss | Reverse Transfer Capacitance | 1.5 | 1.5 | pF |
| Switching Characteristics | ||||
| td(on) | Turn-On Delay Time | 15 | 15 | ns |
| tr | Turn-On Rise Time | 10 | 10 | ns |
| td(off) | Turn-Off Delay Time | 110 | 110 | ns |
| tf | Turn-Off Fall Time | 9 | 9 | ns |
| Qg | Total Gate Charge | 32 | 32 | nC |
| Qgs | Gate-Source Charge | 4 | 4 | nC |
| Qgd | Gate-Drain Charge | 16 | 16 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 9.2 | 9.2 | A |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 30 | 30 | A |
| VSD | Drain-Source Diode Forward Voltage | 1.5 | 1.5 | V |
| trr | Reverse Recovery Time | 280 | 280 | ns |
| Qrr | Reverse Recovery Charge | 3.3 | 3.3 | µC |
2303201000_XCH-GSA11N65E_C5375284.pdf
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