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quality Broadband RF microwave Gallium Nitride transistor Wolfspeed CGHV40180F for amplifier circuit designs factory
quality Broadband RF microwave Gallium Nitride transistor Wolfspeed CGHV40180F for amplifier circuit designs factory
quality Broadband RF microwave Gallium Nitride transistor Wolfspeed CGHV40180F for amplifier circuit designs factory
quality Broadband RF microwave Gallium Nitride transistor Wolfspeed CGHV40180F for amplifier circuit designs factory

Broadband RF microwave Gallium Nitride transistor Wolfspeed CGHV40180F for amplifier circuit designs

Key Attributes
Model Number: CGHV40180F
Product Custom Attributes
Drain To Source Voltage:
125V
Gate Threshold Voltage (Vgs(th)):
2.3V@41.8mA
Reverse Transfer Capacitance (Crss@Vds):
1.23pF
Input Capacitance(Ciss):
57.8pF
Output Capacitance(Coss):
13.7pF
Pd - Power Dissipation:
150W
Mfr. Part #:
CGHV40180F
Product Description

Product Overview

The MACOM CGHV40180F is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications. Operating from a 50-volt rail, it offers high efficiency, high gain, and wide bandwidth capabilities, making it ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package and is suitable for applications in military communications, public safety VHF-UHF, radar, medical, and broadband amplifiers.

Product Attributes

  • Brand: MACOM Technology Solutions Inc.
  • Material: Gallium Nitride (GaN)
  • Package Type: 440223 (2-lead flange)

Technical Specifications

Parameter Symbol Rating Units Conditions
Drain-source Voltage VDSS 150 V 25C
Gate-to-Source Voltage VGS -10, +2
Storage Temperature TSTG -65, +150 C
Operating Junction Temperature TJ 225
Maximum Forward Gate Current IGMAX 42 mA 25C
Maximum Drain Current IDMAX 12.1 A
Soldering Temperature TS 245 C
Screw Torque 40 in-oz
Thermal Resistance, Junction to Case RJC 0.95 C/W PDISS = 150, 85C
Maximum dissipated power 150 W
Case Operating Temperature TC -40, +150 C
Gate Threshold Voltage VGS(th) -3.8, -3.0, -2.3 VDC TC = 25C, VDS = 10 V, ID = 41.8 mA
Gate Quiescent Voltage VGS(Q) -2.7 V TC = 25C, VDS = 50 V, ID = 1000 mA
Saturated Drain Current IDS 27.2, 38.9 A TC = 25C, VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 125 VDC TC = 25C, VGS = -8 V, ID = 41.8 mA
Small Signal Gain GSS 23.4, 24.0 dB TC = 25C, F0 = 900 MHz, VDD = 50 V, IDQ = 1.0 A, PIN = 10 dBm CW
Power Gain GP 19.3, 20.3 TC = 25C, F0 = 900 MHz, VDD = 50 V, IDQ = 1.0 A, PIN = 34 dBm CW
Output Power POUT 53.7, 54.3 dBm TC = 25C, F0 = 900 MHz, VDD = 50 V, IDQ = 1.0 A, PIN = 34 dBm CW
Drain Efficiency 64, 74 % TC = 25C, F0 = 900 MHz, VDD = 50 V, IDQ = 1.0 A, PIN = 34 dBm CW
Output Mismatch Stress VSWR Y 3:1 VDD = 50 V, IDQ = 1.0 A, POUT = 180 W CW
Input Capacitance CGS 57.8 pF TC = 25C, VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS 13.7 pF TC = 25C, VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD 1.23 pF TC = 25C, VDS = 50 V, Vgs = -8 V, f = 1 MHz

2412202123_Wolfspeed-CGHV40180F_C20569477.pdf

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