Silicon Carbide Full Bridge Module Wolfspeed CBB032M12FM3T 1200 Volt 32 Milli Ohm Power Device
Key Attributes
Model Number:
CBB032M12FM3T
Product Custom Attributes
Mfr. Part #:
CBB032M12FM3T
Product Description
Product Overview
The CBB032M12FM3 and CBB032M12FM3T are 1200 V, 32 m Silicon Carbide Full-Bridge Modules designed for high-frequency operation with ultra-low loss characteristics. These normally-off, fail-safe devices offer zero turn-off tail current from the MOSFET, enabling compact, lightweight, and more efficient systems. Key applications include DC-DC converters, EV chargers, high-efficiency converters/inverters, renewable energy systems, and smart-grid/grid-tied distributed generation.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide
- Certifications: RoHS Compliance, REACh Compliance
- Trademarks: Wolfspeed, Wolfstreak logo
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Product Model | CBB032M12FM3 / CBB032M12FM3T | |||||
| Drain-Source Voltage | VDS | 1200 | V | |||
| Drain-Source On-State Resistance | RDS(on) | 32.0 | 44.0 | m | VGS = 15 V, ID = 30 A | |
| Gate-Source Voltage, Maximum Value | VGS max | -8 | +19 | V | Transient, < 100 ns | |
| Gate-Source Voltage, Recommended | VGS op | -4 | +15 | V | ||
| DC Continuous Drain Current (TVJ 150 C) | ID | 39 | A | VGS = 15 V, THS = 50 C | ||
| DC Continuous Drain Current (TVJ 175 C) | ID | 41 | A | VGS = 15 V, THS = 50 C | ||
| DC Source-Drain Current (Body Diode) | ISD | 22 | A | VGS = -4 V, THS = 50 C, TVJ 175 C | ||
| Pulsed Drain Current | ID (pulsed) | 82 | A | VGS = 15 V, THS = 50 C | ||
| Virtual Junction Temperature | TVJ op | -40 | 150 | C | Operation | |
| Virtual Junction Temperature | TVJ op | -40 | 175 | C | Intermittent with Reduced Life | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.9 | V | VDS = VGS, ID = 11 mA |
| Zero Gate Voltage Drain Current | IDSS | 1 | 19 | A | VGS = 0 V, VDS = 1200 V | |
| Gate-Source Leakage Current | IGSS | 10 | 100 | nA | VGS = 15 V, VDS = 0 V | |
| Transconductance | gfs | 24 | S | VDS = 20 V, ID = 30 A | ||
| Turn-On Switching Energy | EOn | 0.47 | 0.67 | mJ | TVJ = 25 C to 150 C | |
| Turn-Off Switching Energy | EOff | 0.012 | 0.012 | mJ | TVJ = 25 C to 150 C | |
| Internal Gate Resistance | RG(int) | 1.7 | f = 100 kHz, VAC = 25 mV | |||
| Input Capacitance | Ciss | 3.5 | nF | VGS = 0 V, VDS = 1000 V, f = 100 kHz | ||
| Output Capacitance | Coss | 0.17 | nF | |||
| Reverse Transfer Capacitance | Crss | 14 | pF | |||
| Gate to Source Charge | QGS | 40 | nC | VDS = 800 V, ID = 40 A | ||
| Gate to Drain Charge | QGD | 34 | nC | |||
| Total Gate Charge | QG | 118 | nC | |||
| FET Thermal Resistance, Junction to Heatsink | Rth JHS | 1.25 | C/W | Measured with Pre-Applied TIM | ||
| Body Diode Forward Voltage | VSD | 5.0 | 5.5 | V | VGS = -4 V, ISD = 30 A | |
| Reverse Recovery Time | tRR | 19 | ns | VGS = -4 V, ISD = 30 A, VR = 600 V, di/dt = 7 A/ns, TVJ = 150 C | ||
| Reverse Recovery Charge | QRR | 0.7 | C | |||
| Peak Reverse Recovery Current | IRRM | 60 | A | |||
| Reverse Recovery Energy | ERR | 0.03 | 0.09 | mJ | TVJ = 25 C to 150 C | |
| Package Resistance, M1, M3 (High-Side) | RHS | 1.6 | m | TC = 125C | ||
| Package Resistance, M2, M4 (Low-Side) | RLS | 1.5 | m | TC = 125C | ||
| Stray Inductance | LStray | 14.2 | nH | Between DC- and DC+, f = 10 MHz | ||
| Case Temperature | TC | -40 | 125 | C | ||
| Mounting Torque | MS | 2.0 | 2.3 | N-m | M4 bolts | |
| Weight | W | 21 | g | |||
| Case Isolation Voltage | Visol | 3 | kV AC | 50 Hz, 1 minute | ||
| Comparative Tracking Index | CTI | 200 | ||||
| Clearance Distance (Terminal to Terminal) | 5.0 | mm | ||||
| Clearance Distance (Terminal to Heatsink) | 10.0 | mm | ||||
| Creepage Distance (Terminal to Terminal) | 6.3 | mm | ||||
| Creepage Distance (Terminal to Heatsink) | 11.5 | mm | ||||
| NTC Thermistor Rated Resistance | RNTC | 5.0 | k | TNTC = 25C | ||
| NTC Thermistor Resistance Tolerance at 25 C | R/R | -5 | 5 | % | ||
| NTC Thermistor Beta Value (T2 = 50 C) | 25/50 | 3380 | K | |||
| NTC Thermistor Beta Value (T2 = 80 C) | 25/80 | 3468 | K | |||
| NTC Thermistor Beta Value (T2 = 100 C) | 25/100 | 3523 | K | |||
| NTC Thermistor Power Dissipation Max | PMax | 10 | mW | TNTC = 25C |
2412111108_Wolfspeed-CBB032M12FM3T_C20544632.pdf
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