VBsemi Elec AO4447A VB Power MOSFET P Channel Trench Type with Halogen Free Design and Low On Resistance
Key Attributes
Model Number:
AO4447A-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
390pF@15V
Number:
1 P-Channel
Output Capacitance(Coss):
455pF
Input Capacitance(Ciss):
2.55nF@15V
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
29.5nC@4.5V
Mfr. Part #:
AO4447A-VB
Package:
SO-8
Product Description
Product Overview
The AO4447A-VB is a P-Channel Trench Power MOSFET designed for load switching applications. It offers high performance with low on-resistance and features like 100% Rg and UIS testing, making it suitable for notebook adaptors. This product is Halogen-free and RoHS compliant.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = - 250 A | - | - | -30 | V |
| VDS Temperature Coefficient | VDS/T | ID = - 250 A | - | -34 | - | mV/ C |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | -1.4 | - | -2.5 | V |
| VGS Temperature Coefficient | VGS(th)/T | VDS = VGS(th) | - | 5.3 | - | mV/ C |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 25 V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 30 V, VGS = 0 V | - | -1 | - | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 30 V, VGS = 0 V, TJ = 55 C | - | -5 | - | A |
| On-State Drain Current | ID(on) | VDS - 10 V, VGS = - 10 V | - | -30 | - | A |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 10 A | - | 0.011 | - | |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 4.5 V, ID = - 8 A | - | 0.015 | - | |
| Forward Transconductance | gfs | VDS = - 10 V, ID = - 10 A | - | 28 | - | S |
| Dynamic | ||||||
| Input Capacitance | Ciss | VDS = - 15 V, VGS = 0 V, f = 1 MHz | - | 2550 | - | pF |
| Output Capacitance | Coss | VDS = - 15 V, VGS = - 10 V, ID = - 10 A | - | 455 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = - 15 V, VGS = - 10 V, ID = - 10 A | - | 390 | - | pF |
| Total Gate Charge | Qg | VDS = - 15 V, VGS = - 10 V, ID = - 10 A | - | 57 | 86 | nC |
| Total Gate Charge | Qg | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | - | 29.5 | 45 | nC |
| Gate-Source Charge | Qgs | - | - | 8 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 22 | - | nC |
| Gate Resistance | Rg | f = 1 MHz | - | 0.5 | 2.2 | |
| Turn-On Delay Time | td(on) | VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 | - | 13 | 25 | ns |
| Rise Time | tr | VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 | - | 12 | 24 | ns |
| Turn-Off Delay Time | td(off) | VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 | - | 40 | 70 | ns |
| Fall Time | tf | VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 | - | 9 | 18 | ns |
| Turn-On Delay Time | td(on) | VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 | - | 48 | 80 | ns |
| Rise Time | tr | VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 | - | 92 | 160 | ns |
| Turn-Off Delay Time | td(off) | VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 | - | 34 | 60 | ns |
| Fall Time | tf | VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 | - | 19 | 35 | ns |
| Drain-Source Body Diode Characteristics | ||||||
| Continous Source-Drain Diode Current | IS | TC = 25 C | - | -4.1 | - | A |
| Pulse Diode Forward Current | ISM | - | - | -60 | - | A |
| Body Diode Voltage | VSD | IS = - 3 A, VGS = 0 V | - | -0.75 | -1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF = - 10 A, dI/dt = 100 A/s, TJ = 25 C | - | 27 | 45 | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF = - 10 A, dI/dt = 100 A/s, TJ = 25 C | - | 16 | 27 | nC |
| Reverse Recovery Fall Time | ta | - | - | 12 | - | ns |
| Reverse Recovery Rise Time | tb | - | - | 15 | - | ns |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | -30 | - | V |
| Gate-Source Voltage | VGS | - | - | 20 | - | V |
| Continuous Drain Current | ID | TC = 25 C | - | -13.5 | - | A |
| Continuous Drain Current | ID | TC = 70 C | - | -11.9 | - | A |
| Continuous Drain Current | ID | TC = 150 C | - | -10.9 | - | A |
| Continuous Drain Current | ID | TA = 25 C | - | -8.6 | - | A |
| Continuous Drain Current | ID | TA = 70 C | - | -7.1 | - | A |
| Pulsed Drain Current | IDM | - | - | -50 | - | A |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | - | -4.1 | - | A |
| Avalanche Current | IAS | L = 0.1 mH | - | -20 | - | A |
| Single-Pulse Avalanche Energy | EAS | - | - | 20 | - | mJ |
| Maximum Power Dissipation | PD | TC = 25 C | - | 5.0 | - | W |
| Maximum Power Dissipation | PD | TC = 70 C | - | 3.2 | - | W |
| Maximum Power Dissipation | PD | TA = 25 C | - | 1.7 | - | W |
| Maximum Power Dissipation | PD | TA = 70 C | - | 1.4 | - | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - | -55 | - | 150 | C |
| Thermal Resistance Ratings | ||||||
| Maximum Junction-to-Ambient | RthJA | t 10 s | - | 38 | 46 | C/W |
| Maximum Junction-to-Foot | RthJF | Steady State | - | 20 | 25 | C/W |
2504171620_VBsemi-Elec-AO4447A-VB_C724961.pdf
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