Fast switching N channel MOSFET XYD X4N50DHE2 ideal for standby power and LED power supply solutions
Key Attributes
Model Number:
X4N50DHE2
Product Custom Attributes
Mfr. Part #:
X4N50DHE2
Package:
TO-252-2L
Product Description
Product Overview
The X4N50DHE2 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications such as LED power supplies, cell phone chargers, and standby power.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Model: X4N50DHE2
- Package: TO-252-2L
- Packaging: Tape & Reel
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | VDSS | - | - | 500 | V | - |
| VGS | -30 | - | 30 | V | - | |
| ID | - | - | 4 | A | TC=25 (Note 1) | |
| IDM | - | - | 16 | A | (Note 2) | |
| EAS | - | - | 211 | mJ | L=10mH,VD=50V, TC=25 | |
| PD | - | - | 71 | W | TC=25 | |
| PD | - | - | 1.9 | W | TA=25 | |
| Thermal Characteristics | Rth(J-c) | - | 1.76 | - | /W | - |
| Rth(J-a) | - | 66 | - | - | - | |
| Electrical Characteristics (Static) | BVDSS | 500 | - | - | V | VGS=0V,ID=250A |
| IDSS | - | - | 1 | A | VDS=500V,VGS=0V | |
| IGSSF | - | - | 100 | nA | VGS=30V,VDS=0V | |
| IGSSR | - | - | -100 | nA | VGS=-30V,VDS=0V | |
| VGS(th) | 2 | 3.2 | 4 | V | VDS=VGS,ID=250A | |
| RDS(on) | - | 1.5 | 1.7 | VGS=10V,ID=2A | ||
| Electrical Characteristics (Dynamic) | Ciss | - | 582 | - | pF | VDS=25V,VGS=0V,f=1.0MHZ |
| Coss | - | 62 | - | pF | - | |
| Crss | - | 3 | - | pF | - | |
| td(on) | - | 7 | - | ns | VDD=250V,RG=10,ID=4A,VGS=10V | |
| Gate Charge Characteristics | Qg | - | 13 | - | nC | VDS=400V,ID=4A,VGS=10V |
| Qgs | - | 5 | - | nC | - | |
| Qgd | - | 3 | - | nC | - | |
| Reverse Diode | IS | - | - | 4 | A | - |
| ISM | - | - | 16 | A | - | |
| VSD | - | - | 1.2 | V | IS=2A,VGS=0V |
2509251450_XYD-X4N50DHE2_C51952983.pdf
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