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quality Low gate charge MOSFET XYD X2P2N040GLV8 designed for AC DC quick chargers and power management devices factory
quality Low gate charge MOSFET XYD X2P2N040GLV8 designed for AC DC quick chargers and power management devices factory
quality Low gate charge MOSFET XYD X2P2N040GLV8 designed for AC DC quick chargers and power management devices factory
quality Low gate charge MOSFET XYD X2P2N040GLV8 designed for AC DC quick chargers and power management devices factory

Low gate charge MOSFET XYD X2P2N040GLV8 designed for AC DC quick chargers and power management devices

Key Attributes
Model Number: X2P2N040GLV8
Product Custom Attributes
Mfr. Part #:
X2P2N040GLV8
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The X2P2N040GLV8 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it 100% avalanche tested. This MOSFET is designed for applications such as synchronous rectification for AC/DC quick chargers, battery management systems, and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
  • Product Name: X2P2N040GLV8
  • Package Type: PDFN5*6-8L
  • Packaging: Tape&reel

Technical Specifications

ParameterSymbolValues (Min)Values (Typ)Values (Max)UnitNote/Test Conditions
Absolute Maximum RatingsVDSS--40V-
VGS-20-20V-
ID (TC=25)--150ATC=25
ID (TC=100)--95ATC=100
IDM--600A-
EAS--100mJL=0.5mH,VD=32V, TC=25
Power DissipationPD--83WTC=25
Tj,TSTG-55-150-
Rth(ch-c)--1.5/W-
Electrical Characteristics (Tj=25,unless otherwise noted)BVDSS40--VVGS=0V,ID=250A
IDSS--1AVDS=40V,VGS=0V
IGSSF--100nAVGS=20V,VDS=0V
IGSSR---100nAVGS=-20V,VDS=0V
VGS(th)1.21.82.4VVDS=VGS,ID=250A
RDS(on) (VGS=10V,ID=20A)-1.72.2m-
RDS(on) (VGS=4.5V,ID=20A)-2.53.0m-
Rg-2.1-VGS=0V, VDS=0V, f=1MHz
Dynamic CharacteristicsCiss-3855-pFVDS=25V,VGS=0V,f=1.0MHZ
Coss-2937-pF-
Crss-555-pF-
Switching Characteristicstd(on)-16-nsVDD=20V,ID=50A,VGS=10V,RG=2.7
tr-104-ns-
td(off)-86-ns-
tf-105-ns-
Gate Charge CharacteristicsQg-66.3-nCVDS=32V,ID=10A,VGS=10V
Qgs-13.5-nC-
Qgd-12.2-nC-
Reverse DiodeIS--150A-
ISM--600A-
VSD--1.2VIS=20A,VGS=0V
Reverse Recoverytrr-56-nsVDS=30V,VGS=0V,IS=50A di/dt=100A/s
Qrr-76-nC-

2509251450_XYD-X2P2N040GLV8_C51952894.pdf

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