Power MOSFET VBsemi Elec IRFR5410TRPBF VB P Channel 100 V designed for switching and DC DC converter
Key Attributes
Model Number:
IRFR5410TRPBF-VB
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
250mΩ@10V;280mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 P-Channel
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
1.055nF
Gate Charge(Qg):
23.2nC@10V;11.7nC@4.5V
Mfr. Part #:
IRFR5410TRPBF-VB
Package:
TO-252
Product Description
IRFR5410TRPBF-VB P-Channel 100 V MOSFET
The IRFR5410TRPBF-VB is a P-Channel Trench Power MOSFET designed for power switching applications. It offers high performance with features such as 100% Rg and UIS tested, and compliance with RoHS Directive 2002/95/EC. This MOSFET is suitable for use in DC/DC converters and other power switching circuits.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free (IEC 61249-2-21), RoHS Directive 2002/95/EC compliant
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = - 250 A | - 100 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | - 1 | - 2.5 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = 20 V | 250 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = - 100 V, VGS = 0 V | - 1 | A | ||
| VDS = - 100 V, VGS = 0 V, TJ = 150 C | - 50 | A | ||||
| On-State Drain Current | ID(on) | VDS - 10 V, VGS = - 10 V | - 15 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 3.6 A | 0.250 | |||
| VGS = - 4.5 V, ID = - 3.4 A | 0.280 | |||||
| Forward Transconductance | gfs | VDS = - 15 V, ID = - 3.6 A | 12 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = - 50 V, f = 1 MHz | 1055 | pF | ||
| Output Capacitance | Coss | VGS = 0 V, VDS = - 50 V, f = 1 MHz | 65 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = - 50 V, f = 1 MHz | 41 | pF | ||
| Total Gate Charge | Qg | VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A | 23.2 | 34.8 | nC | |
| VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A | 11.7 | 17.6 | nC | |||
| Gate-Source Charge | Qgs | VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A | 3.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A | 4.8 | nC | ||
| Gate Resistance | Rg | f = 1 MHz | 1.2 | |||
| Turn-On Delay Time | td(on) | VDD = - 50 V, RL = 17.2 ID - 2.9 A, VGEN = - 10 V, Rg = 1 | 7 | 14 | ns | |
| Rise Time | tr | VDD = - 50 V, RL = 17.2 ID - 2.9 A, VGEN = - 10 V, Rg = 1 | 12 | 18 | ns | |
| Turn-Off Delay Time | td(off) | VDD = - 50 V, RL = 17.2 ID - 2.9 A, VGEN = - 10 V, Rg = 1 | 33 | 50 | ns | |
| Fall Time | tf | VDD = - 50 V, RL = 17.2 ID - 2.9 A, VGEN = - 10 V, Rg = 1 | 9 | 18 | ns | |
| Drain-Source Body Diode Ratings and Characteristics | ||||||
| Continuous Current | IS | TC = 25 C | - 8.8 | A | ||
| Pulsed Current | ISM | TC = 25 C | - 15 | A | ||
| Forward Voltage | VSD | IF = - 2.9 A, VGS = 0 V | - 0.8 | - 1.5 | V | |
| Reverse Recovery Time | trr | IF = - 2.9 A, dI/dt = 100 A/s | 0 | 75 | ns | |
| Peak Reverse Recovery Current | IRM(REC) | IF = - 2.9 A, dI/dt = 100 A/s | - 4 | - 6 | A | |
| Reverse Recovery Charge | Qrr | IF = - 2.9 A, dI/dt = 100 A/s | 98 | 147 | nC | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TC = 25 C, unless otherwise noted | - 100 | V | ||
| Gate-Source Voltage | VGS | TC = 25 C, unless otherwise noted | 20 | V | ||
| Continuous Drain Current | ID | TC = 25 C (TJ = 150 C) | - 8.8 | A | ||
| TC = 70 C | - 7.1 | A | ||||
| Pulsed Drain Current | IDM | - 25 | A | |||
| Avalanche Current | IAS | - 18 | A | |||
| Single Avalanche Energy | EAS | L = 0.1 mH | 16.2 | mJ | ||
| Maximum Power Dissipation | PD | TC = 25 C | 32.1 | W | ||
| TA = 25 C | 2.5 | W | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 | 150 | C | ||
| Thermal Resistance Ratings | ||||||
| Junction-to-Ambient (PCB Mount) | RthJA | 50 | C/W | |||
| Junction-to-Case (Drain) | RthJC | 3.9 | C/W | |||
2504180925_VBsemi-Elec-IRFR5410TRPBF-VB_C6705282.pdf
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