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quality Phase Control Thyristor VISHAY VS-ST1200C20K1P with Metal Case and Center Amplifying Gate Technology factory
quality Phase Control Thyristor VISHAY VS-ST1200C20K1P with Metal Case and Center Amplifying Gate Technology factory

Phase Control Thyristor VISHAY VS-ST1200C20K1P with Metal Case and Center Amplifying Gate Technology

Key Attributes
Model Number: VS-ST1200C20K1P
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
200mA
Voltage - On State(Vtm):
1.73V
Current - On State(It(RMS)):
3.08kA
Peak Off - State Voltage(Vdrm):
2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
-
Mfr. Part #:
VS-ST1200C20K1P
Package:
TO-200AC
Product Description

Product Overview

The Vishay Semiconductors VS-ST1200C..K Series are high-performance Phase Control Thyristors featuring a center amplifying gate and a metal case with a ceramic insulator. Designed and qualified for industrial-level applications, these thyristors are ideal for DC motor controls, controlled DC power supplies, and AC controllers. They offer robust performance with a high profile hockey PUK design in the international standard K-PUK (A-24) package.

Product Attributes

  • Brand: Vishay Semiconductors
  • Case Style: K-PUK (A-24)
  • Material Categorization: For definitions of compliance, please see www.vishay.com/doc?99912

Technical Specifications

Parameter Test Conditions Values Units
Primary Characteristics
IT(AV) 1650 A
VDRM/VRRM 1200, 1400, 1600, 1800, 2000 V
VTM 1.73 V
IGT 100 mA
TJ -40 to +125 C
Package K-PUK (A-24)
Circuit configuration Single SCR
Major Ratings and Characteristics
IT(AV) Ths 55 C 1650 A
IT(RMS) Ths 25 C 3080 A
ITSM 50 Hz 30 500 A
60 Hz 32 000 A
I2t 50 Hz 4651 kAs
60 Hz 4250 kAs
VDRM/VRRM 1200 to 2000 V
tq Typical 200 s
TJ -40 to +125 C
Voltage Ratings
TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
VS-ST1200C..K 12 1200 1300 100
VS-ST1200C..K 14 1400 1500 150
VS-ST1200C..K 16 1600 1700 160
VS-ST1200C..K 18 1800 1900 180
VS-ST1200C..K 20 2000 2100 200
Absolute Maximum Ratings
Maximum average on-state current at heatsink temperature 180 conduction, half sine wave double side (single side) cooled 1650 (700) A
55 (85) C
Maximum RMS on-state current DC at 25 C heatsink temperature double side cooled 3080 A
Maximum peak, one-cycle non-repetitive surge current t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 30 500 A
t = 8.3 ms 32 000 A
t = 10 ms 100 % VRRM reapplied 25 700 A
t = 8.3 ms 26 900 A
Maximum I2t for fusing t = 10 ms No voltage reapplied 4651 kAs
t = 8.3 ms 4250 kAs
t = 10 ms 100 % VRRM reapplied 3300 kAs
t = 8.3 ms 3000 kAs
Maximum I2t for fusing t = 0.1 ms to 10 ms, no voltage reapplied 46 510 kAs
Low level value of threshold voltage (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.91 V
High level value of threshold voltage (I > x IT(AV)), TJ = TJ maximum 1.01 V
Low level value of on-state slope resistance (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.21 m
High level value of on-state slope resistance (I > x IT(AV)), TJ = TJ maximum 0.19 m
Maximum on-state voltage Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 V
Maximum holding current TJ = 25 C, anode supply 12 V resistive load 600 mA
Typical latching current 1000
Switching Parameter
Maximum non-repetitive rate of rise of turned-on current Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/s
Typical delay time Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.9 s
Typical turn-off time ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 , tp = 500 s 200 s
Blocking Parameter
Maximum critical rate of rise of off-state voltage TJ = TJ maximum linear to 80 % rated VDRM 500 V/s
Maximum peak reverse and off-state leakage current TJ = TJ maximum, rated VDRM/VRRM applied 100 mA
Triggering Parameter
Maximum peak gate power TJ = TJ maximum, tp 5 ms 16 W
Maximum average gate power TJ = TJ maximum, f = 50 Hz, d% = 50 3
Maximum peak positive gate current TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage 20 V
Maximum peak negative gate voltage 5.0 V
DC gate current required to trigger TJ = -40 C, 12 V anode to cathode applied 200 mA
TJ = 25 C 100 to 200 mA
TJ = 125 C 50 mA
DC gate voltage required to trigger TJ = -40 C 1.4 V
TJ = 25 C 1.1 to 3.0 V
TJ = 125 C 0.9 V
DC gate current not to trigger TJ = TJ maximum 10 mA
DC gate voltage not to trigger 0.25 V
Thermal and Mechanical Specifications
Maximum operating junction temperature range -40 to 125 C
Maximum storage temperature range -40 to 150 C
Maximum thermal resistance, junction to heatsink DC operation single side cooled 0.042 K/W
DC operation double side cooled 0.021 K/W
Maximum thermal resistance, case to heatsink DC operation single side cooled 0.006 K/W
DC operation double side cooled 0.003 K/W
Mounting force, 10 % 500 (2500) N (kg)
Approximate weight 425 g
Case style See dimensions - link at the end of datasheet K-PUK (A-24)

Dimensions: See www.vishay.com/doc?95081

Ordering Information:

Device code: VS-ST1200C20K

  • 1 - Vishay Semiconductors product
  • 2 - Essential part number
  • 3 - 0 = converter grade
  • 4 - C = ceramic PUK
  • 5 - Voltage code: code x 100 = VRRM (see Voltage Ratings table)
  • 6 - K = PUK case K-PUK (A-24)
  • 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
  • 7 - 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
  • 8 - Critical dV/dt: None = 500 V/s (standard selection)
  • 8 - L = 1000 V/s (special selection)
  • 9 - 8 = voltage code for 1800V

2411272144_VISHAY-VS-ST1200C20K1P_C17687988.pdf

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