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quality Low gate charge P channel MOSFET XYD X409CVA designed for motor drive and synchronous rectification factory
quality Low gate charge P channel MOSFET XYD X409CVA designed for motor drive and synchronous rectification factory
quality Low gate charge P channel MOSFET XYD X409CVA designed for motor drive and synchronous rectification factory
quality Low gate charge P channel MOSFET XYD X409CVA designed for motor drive and synchronous rectification factory

Low gate charge P channel MOSFET XYD X409CVA designed for motor drive and synchronous rectification

Key Attributes
Model Number: X409CVA
Product Custom Attributes
Mfr. Part #:
X409CVA
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The X409CVA is a P-CHANNEL MOSFET featuring Trench Power MOSFET technology, offering low RDSON and low gate charge. It is RoHS and Halogen Free compliant and suitable for synchronous rectification, industrial, and motor drive applications.

Product Attributes

  • Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
  • Product Name: X409CVA
  • Certifications: RoHS and Halogen Free Complaint
  • Package: PDFN5*6-8L

Technical Specifications

ParameterSymbolValuesUnitNote/Test Conditions
Absolute Maximum Ratings
Drain-Source VoltageVDSS-60VVGS=0V
Gate-Source VoltageVGS-20 to 20VVDS=0V
Continuous Drain CurrentID-40 (TC=25), -25 (TC=100)ANote 1
Pulsed Drain CurrentIDM-80ANote 2
Avalanche EnergyEAS80mJL=0.1mH
Maximum Power DissipationPD62.5 (TC=25), 25 (TC=100)W
Operating Junction and Storage Temperature RangeTj,TSTG-55 to 150
Thermal Characteristics
Thermal resistance, Junction to CaseRth(J-c)1.1 (Typ)/W
Thermal resistance, Junction to AmbientRth(J-a)39 (Typ), 50 (Max)/W
Electrical Characteristics (Tj=25,unless otherwise noted)
Static characteristics
Drain-Source Breakdown VoltageBVDSS-60VVGS=0V,ID=-250A
Zero Gate Voltage Drain CurrentIDSS-1AVDS=-60V,VGS=0V
Gate-Body Leakage Current,ForwardIGSSF100nAVGS=20V,VDS=0V
Gate-Body Leakage Current,ReverseIGSSR-100nAVGS=-20V,VDS=0V
Gate-Source Threshold VoltageVGS(th)-1.25 to -2.05VVDS=VGS,ID=-250A
Drain-Source On-State ResistanceRDS(on)16.4 (Typ), 20.5 (Max) @VGS=-10V,ID=-20A; 18.3 (Typ), 23.5 (Max) @VGS=-4.5V,ID=-20Am
Gate resistanceRg8.9VGS=0V, VDS=0V,f=1MHz
Forward Transconductancegfs61SVDS=-5V,ID=-20A
Dynamic characteristics
Input CapacitanceCiss4967pFVDS=-30V,VGS=0V,f=1.0MHZ
Output CapacitanceCoss234pF
Reverse Transfer CapacitanceCrss178pF
Turn-On Delay Timetd(on)12nsVDD=-30V,RG=3,VGS=-10V,RL=1.5
Turn-On Rise Timetr61ns
Turn-Off Delay Timetd(off)160ns
Turn-Off Fall Timetf137ns
Gate charge characteristics
Total Gate ChargeQg98nCVDS=-30V,ID=-20A,VGS=-10V
Gate-Source ChargeQgs19nC
Gate-Drain ChargeQg d16nC
Reverse diode
Continuous Diode Forward CurrentIS-40A
Diode Forward VoltageVSD-1VIS=-1A,VGS=0V
Body Diode Reverse Recovery Timetrr37nsVGS=0V,Is=-20A, dI/dt=-100A/s
Body Diode Reverse Recovery ChargeQrr35nC

2509251450_XYD-X409CVA_C51952770.pdf

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