General purpose NPN transistor XZT SS8050 suitable for switching and amplification applications
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@100mA,1V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
500mV@800mA,80mA
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description
SS8050 Transistor (NPN)
The SS8050 is an NPN transistor designed for general-purpose applications. It is complementary to the SS8550 transistor. With a collector current rating of 1.5A, it is suitable for various switching and amplification tasks.
Product Attributes
- Brand: XT ELECTRONICS
- Marking: Y1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40 V , IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V , I B=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | A | ||
| DC current gain (Rank L, J) | hFE(1) | VCE=1V, I C= 100mA | 120 | 400 | ||
| DC current gain (Rank H) | hFE(1) | VCE=1V, I C= 100mA | 200 | 350 | ||
| DC current gain (Rank L) | hFE(1) | VCE=1V, I C= 100mA | 120 | 200 | ||
| DC current gain (Rank J) | hFE(1) | VCE=1V, I C= 100mA | 300 | 400 | ||
| DC current gain | hFE(2) | VCE=1V, I C= 800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800 mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800 mA, IB= 80mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA, f=30MHz | 100 | MHz |
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 25 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 1500 | mA |
| Collector Power Dissipation | PC | 300 | mW |
| Thermal Resistance (Junction to Ambient) | RJA | 417 | /W |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55+150 |
2410121612_XZT-SS8050_C5805831.pdf
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