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quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D02120E 1200 Volt 2 Amp for Industrial Electronics factory
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D02120E 1200 Volt 2 Amp for Industrial Electronics factory

Silicon Carbide Schottky Barrier Diode Wolfspeed E4D02120E 1200 Volt 2 Amp for Industrial Electronics

Key Attributes
Model Number: E4D02120E
Product Custom Attributes
Mfr. Part #:
E4D02120E
Package:
TO-252
Product Description

Product Overview

The Wolfspeed E4D02120E is a 1200 V, 2 A Silicon Carbide (SiC) Schottky Barrier Diode designed to enhance the performance of power electronics systems. Leveraging SiC technology, it offers higher efficiency, faster switching frequencies, and improved power density compared to silicon-based solutions. These diodes are easily paralleled without concern for thermal runaway, and their reduced cooling requirements and superior thermal performance contribute to lower overall system costs. Key applications include bootstrap diodes, boost diodes in PFC circuits, automotive power conversion, PV inverters, and outdoor power conversion.

Product Attributes

  • Brand: Wolfspeed
  • Material: Silicon Carbide (SiC)
  • Certifications: AEC-Q101, HV-H3TRB qualified, PPAP capable
  • Package Type: TO-252-2
  • RoHS Compliance: Compliant with EU Directive 2011/65/EC (RoHS2)

Technical Specifications

Parameter Symbol Value Unit Test Conditions Notes
Repetitive Peak Reverse Voltage VRRM 1200 V DC Blocking Voltage
Continuous Forward Current IF 8 A TC = 25 C Fig. 3
2 A TC = 135 C
2 A TC = 160 C
Repetitive Peak Forward Surge Current IFRM 11 A TC = 25 C, tP = 10 ms, Half Sine Wave
7 A TC = 110 C, tP = 10 ms, Half Sine Wave
Power Dissipation Ptot 50 W TC = 25 C Fig. 4
21 W TC = 110 C
Forward Voltage VF 1.4 V IF = 2 A, TJ = 25 C Fig. 1
1.8 V IF = 2 A, TJ = 25 C
1.9 V IF = 2 A, TJ = 175 C
Reverse Current IR 10 A VR = 1200 V, TJ = 25 C Fig. 2
50 A VR = 1200 V, TJ = 25 C
40 A VR = 1200 V, TJ = 175 C
Total Capacitive Charge QC 16 nC VR = 800 V, TJ = 25 C Fig. 5
Total Capacitance C 153 pF VR = 0 V, TJ = 25 C, f = 1 MHz Fig. 6
17 pF VR = 400 V, TJ = 25 C, f = 1 MHz
14 pF VR = 800 V, TJ = 25 C, f = 1 MHz
Capacitance Stored Energy EC 5.6 J VR = 800 V Fig. 7
Thermal Resistance, Junction to Case (Typ.) R, JC 2.99 C/W
Operating Junction & Storage Temperature TJ, Tstg -55 to +175 C Fig. 8
Moisture Sensitivity Level MSL 3
Electrostatic Discharge (ESD) Human Body Model HBM Class 3B ( 8000 V)
Electrostatic Discharge (ESD) Charge Device Model CDM Class C3 ( 1000 V)

2411041524_Wolfspeed-E4D02120E_C20592236.pdf

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